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On the origin of the 2.2-2.3eV photoluminescence from chemically etched germanium

On the origin of the 2.2-2.3eV photoluminescence from chemically etched germanium
On the origin of the 2.2-2.3eV photoluminescence from chemically etched germanium
The photoluminescence (PL) at ~2.2–2.3 eV from Ge-based nanocrystalline materials is described in the literature as nanocrystal size-independent. We have observed visible luminescence from two different types of stain-etched Ge samples, one prepared after Sendova-Vassileva et al. (Thin Solid Films 255 (1995) 282) in a solution of H2O2:HF at 50:1 volume ratio, and the other in a solution of HF:H3PO4:H2O2 at 34:17:1 volume ratio. Energy dispersive X-ray analysis (EDX), Raman and FTIR spectroscopy, and the near edge X-ray absorption structure (XANES), indicate that the chemically etched Ge layers of the former type of samples are composed of non-stoichometric Ge oxides, i.e. GeOx (0<x<2), and free from any Ge nanoconstructions. It is also suggested from XANES that the latter type of chemically etched Ge samples comprise 8–9 nm nanocrystals of Ge, surface-covered with mainly oxygen. Photoluminescence occurred at ~2.3 eV for all samples. The PL behavior of the latter type of chemically etched Ge on annealing in different chemical environments (air or H) allowed us to conclude that the PL from these materials, as well as that from those Ge-based nanocrystalline materials reported in the literature, is from GeOxs.
Chemically etched Ge, XANES, Photoluminescence, GeOx, Commercial c-GeO2, Ge nanocrystals
0022-2313
275-283
Kartopu, G.
155e8298-783d-4d69-80a9-77715071b12a
Bayliss, S.C.
9113c54c-9d63-4cdb-a417-e663aa996553
Karavanskii, V.A.
ea040e88-fd16-492f-8821-4abd2735d820
Curry, R.J.
1ae2a4da-7efe-4333-a34e-0ec20ae95154
Turan, R.
1e2e3787-c812-41a0-9e7e-e9bff6858998
Sapelkin, A.V.
1370d42a-0e34-4288-9d44-08ec2bf57245
Kartopu, G.
155e8298-783d-4d69-80a9-77715071b12a
Bayliss, S.C.
9113c54c-9d63-4cdb-a417-e663aa996553
Karavanskii, V.A.
ea040e88-fd16-492f-8821-4abd2735d820
Curry, R.J.
1ae2a4da-7efe-4333-a34e-0ec20ae95154
Turan, R.
1e2e3787-c812-41a0-9e7e-e9bff6858998
Sapelkin, A.V.
1370d42a-0e34-4288-9d44-08ec2bf57245

Kartopu, G., Bayliss, S.C., Karavanskii, V.A., Curry, R.J., Turan, R. and Sapelkin, A.V. (2003) On the origin of the 2.2-2.3eV photoluminescence from chemically etched germanium. Journal of Luminescence, 101 (4), 275-283. (doi:10.1016/S0022-2313(02)00570-7).

Record type: Article

Abstract

The photoluminescence (PL) at ~2.2–2.3 eV from Ge-based nanocrystalline materials is described in the literature as nanocrystal size-independent. We have observed visible luminescence from two different types of stain-etched Ge samples, one prepared after Sendova-Vassileva et al. (Thin Solid Films 255 (1995) 282) in a solution of H2O2:HF at 50:1 volume ratio, and the other in a solution of HF:H3PO4:H2O2 at 34:17:1 volume ratio. Energy dispersive X-ray analysis (EDX), Raman and FTIR spectroscopy, and the near edge X-ray absorption structure (XANES), indicate that the chemically etched Ge layers of the former type of samples are composed of non-stoichometric Ge oxides, i.e. GeOx (0<x<2), and free from any Ge nanoconstructions. It is also suggested from XANES that the latter type of chemically etched Ge samples comprise 8–9 nm nanocrystals of Ge, surface-covered with mainly oxygen. Photoluminescence occurred at ~2.3 eV for all samples. The PL behavior of the latter type of chemically etched Ge on annealing in different chemical environments (air or H) allowed us to conclude that the PL from these materials, as well as that from those Ge-based nanocrystalline materials reported in the literature, is from GeOxs.

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Published date: 2003
Keywords: Chemically etched Ge, XANES, Photoluminescence, GeOx, Commercial c-GeO2, Ge nanocrystals

Identifiers

Local EPrints ID: 13837
URI: http://eprints.soton.ac.uk/id/eprint/13837
ISSN: 0022-2313
PURE UUID: 3abbd875-1363-4730-a076-65a979c2f3dd

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Date deposited: 07 Jan 2005
Last modified: 08 Jan 2022 18:48

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Contributors

Author: G. Kartopu
Author: S.C. Bayliss
Author: V.A. Karavanskii
Author: R.J. Curry
Author: R. Turan
Author: A.V. Sapelkin

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