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Three-dimensional structuring of sapphire by sequential He+ ion-beam implantation and wet chemical etching

Three-dimensional structuring of sapphire by sequential He+ ion-beam implantation and wet chemical etching
Three-dimensional structuring of sapphire by sequential He+ ion-beam implantation and wet chemical etching
We present a method for the selective two- and three-dimensional patterning of sapphire using light ion-beam implantation to generate severe lattice damage to depths exceeding 1 µm and subsequent selective wet chemical etching of the damaged regions by hot H3PO4. C-cut sapphire crystals were implanted through contact masks using ion fluences of 1×1016 to 5×1017 He+/cm2 and energies up to 400 keV. The etching process is characterized by a high selectivity and a rate of approximately 19 nm/min. Whereas an implantation that produces a continuously damaged pathway results in complete etching from the surface, sole in-depth implantation using only high-energy ions leads to under-etching of the crystalline surface layer. By a combination of these processes we have fabricated three-dimensional structures such as channels and bridges in sapphire.
0947-8396
1109-1112
Crunteanu, A.
fca22bc1-40b6-474f-8d0a-e1c1b9206b4c
Jänchen, G.
31d185ec-234e-439e-82a9-455515096860
Hoffmann, P.
495ac254-80a3-4627-88c9-20f601582bc2
Pollnau, M.
1094856b-791a-4050-98d9-c07777d5f0f5
Buchal, C.
5b131bef-44df-4894-88f9-0e5ced0dad0a
Petraru, A.
14de24b4-f803-438f-9f6b-e43877291ac5
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Shepherd, D.P.
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Crunteanu, A.
fca22bc1-40b6-474f-8d0a-e1c1b9206b4c
Jänchen, G.
31d185ec-234e-439e-82a9-455515096860
Hoffmann, P.
495ac254-80a3-4627-88c9-20f601582bc2
Pollnau, M.
1094856b-791a-4050-98d9-c07777d5f0f5
Buchal, C.
5b131bef-44df-4894-88f9-0e5ced0dad0a
Petraru, A.
14de24b4-f803-438f-9f6b-e43877291ac5
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Shepherd, D.P.
9fdd51c4-39d6-41b3-9021-4c033c2f4ead

Crunteanu, A., Jänchen, G., Hoffmann, P., Pollnau, M., Buchal, C., Petraru, A., Eason, R.W. and Shepherd, D.P. (2003) Three-dimensional structuring of sapphire by sequential He+ ion-beam implantation and wet chemical etching. Applied Physics A: Materials Science & Processing, 76 (7), 1109-1112. (doi:10.1007/s00339-002-2027-y).

Record type: Article

Abstract

We present a method for the selective two- and three-dimensional patterning of sapphire using light ion-beam implantation to generate severe lattice damage to depths exceeding 1 µm and subsequent selective wet chemical etching of the damaged regions by hot H3PO4. C-cut sapphire crystals were implanted through contact masks using ion fluences of 1×1016 to 5×1017 He+/cm2 and energies up to 400 keV. The etching process is characterized by a high selectivity and a rate of approximately 19 nm/min. Whereas an implantation that produces a continuously damaged pathway results in complete etching from the surface, sole in-depth implantation using only high-energy ions leads to under-etching of the crystalline surface layer. By a combination of these processes we have fabricated three-dimensional structures such as channels and bridges in sapphire.

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More information

Published date: 2003

Identifiers

Local EPrints ID: 13888
URI: http://eprints.soton.ac.uk/id/eprint/13888
ISSN: 0947-8396
PURE UUID: c251c842-f466-49a4-af98-060c12703594
ORCID for R.W. Eason: ORCID iD orcid.org/0000-0001-9704-2204
ORCID for D.P. Shepherd: ORCID iD orcid.org/0000-0002-4561-8184

Catalogue record

Date deposited: 12 Jan 2005
Last modified: 18 Feb 2021 16:37

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