Channel waveguide lasers in a lead silicate glass fashioned using the extrusion technique
Channel waveguide lasers in a lead silicate glass fashioned using the extrusion technique
We report the use of extrusion for the development of planar buried channel waveguide lasers in a neodymium-doped lead-silicate glass host. The extrusion process was performed at a constant die temperature of 555±10°C, an applied pressure of 1850 N cm–2 and a viscosity of 107.8–107.2 P, respectively. A planar substrate, 10 mm in length cut from the extruded product, had four buried waveguides each with a core size of 8 by 2.5 µm in the horizontal and vertical directions. Optical characterization of this waveguide revealed single-mode laser operation at 1058 nm with a slope efficiency of 40% for an absorbed power of 59.3 mW. The measured device propagation loss was ~0.3 dB cm–1.
2727 -2729
Mairaj, A.K.
161c9411-73e7-497a-a2f8-dfd4817d3d8a
Feng, Xian
b1a28be8-c603-4239-9c93-b2c14274e9c7
Shepherd, D.P.
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
2004
Mairaj, A.K.
161c9411-73e7-497a-a2f8-dfd4817d3d8a
Feng, Xian
b1a28be8-c603-4239-9c93-b2c14274e9c7
Shepherd, D.P.
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Mairaj, A.K., Feng, Xian, Shepherd, D.P. and Hewak, D.W.
(2004)
Channel waveguide lasers in a lead silicate glass fashioned using the extrusion technique.
Applied Physics Letters, 85 (14), .
(doi:10.1063/1.1803623).
Abstract
We report the use of extrusion for the development of planar buried channel waveguide lasers in a neodymium-doped lead-silicate glass host. The extrusion process was performed at a constant die temperature of 555±10°C, an applied pressure of 1850 N cm–2 and a viscosity of 107.8–107.2 P, respectively. A planar substrate, 10 mm in length cut from the extruded product, had four buried waveguides each with a core size of 8 by 2.5 µm in the horizontal and vertical directions. Optical characterization of this waveguide revealed single-mode laser operation at 1058 nm with a slope efficiency of 40% for an absorbed power of 59.3 mW. The measured device propagation loss was ~0.3 dB cm–1.
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Published date: 2004
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Local EPrints ID: 13899
URI: http://eprints.soton.ac.uk/id/eprint/13899
ISSN: 0003-6951
PURE UUID: b63a4ec6-1f8e-4d0d-b451-d8617f6c50ab
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Date deposited: 01 Jan 2005
Last modified: 16 Mar 2024 02:39
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Author:
A.K. Mairaj
Author:
Xian Feng
Author:
D.P. Shepherd
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