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On the growth and lasing characteristics of thick Nd:GGG waveguiding films fabricated by pulsed laser deposition

On the growth and lasing characteristics of thick Nd:GGG waveguiding films fabricated by pulsed laser deposition
On the growth and lasing characteristics of thick Nd:GGG waveguiding films fabricated by pulsed laser deposition
Pulsed laser deposition of epitaxial, single-crystal Nd:Gd3Ga5O12 (Nd:GGG) films on Y3Al5O12 substrates with thicknesses up to 135 µm and propagation losses as low as 0.1 dB/cm is reported. Rutherford backscattering spectrometry has shown constant stoichiometry for the films throughout their depth. Fluorescence properties were similar to that of the bulk Nd:GGG crystal used as a target material for the deposition and lasing action has been observed at 1059.0 and 1060.6 nm after pumping by a Ti:sapphire laser operating at 808 nm. A laser threshold of 18 mW has been obtained and a slope efficiency of 17.5% has been observed using an output coupler of 4.5%. The low losses in combination with the high numerical aperture (0.75) and the thickness of the structures make them suitable for high-power diode pumping.
laser materials, lasers, waveguides, optical waveguides, pulsed laser deposition
0947-8396
1203-1206
Grivas, C.
7f564818-0ac0-4127-82a7-22e87ac35f1a
May-Smith, Timothy
47952bbd-ce28-4507-a723-b4d80bf0f809
Shepherd, David
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Grivas, C.
7f564818-0ac0-4127-82a7-22e87ac35f1a
May-Smith, Timothy
47952bbd-ce28-4507-a723-b4d80bf0f809
Shepherd, David
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020

Grivas, C., May-Smith, Timothy, Shepherd, David and Eason, R.W. (2004) On the growth and lasing characteristics of thick Nd:GGG waveguiding films fabricated by pulsed laser deposition. Applied Physics A: Materials Science & Processing, 79 (4/6), 1203-1206. (doi:10.1007/s00339-004-2718-7).

Record type: Article

Abstract

Pulsed laser deposition of epitaxial, single-crystal Nd:Gd3Ga5O12 (Nd:GGG) films on Y3Al5O12 substrates with thicknesses up to 135 µm and propagation losses as low as 0.1 dB/cm is reported. Rutherford backscattering spectrometry has shown constant stoichiometry for the films throughout their depth. Fluorescence properties were similar to that of the bulk Nd:GGG crystal used as a target material for the deposition and lasing action has been observed at 1059.0 and 1060.6 nm after pumping by a Ti:sapphire laser operating at 808 nm. A laser threshold of 18 mW has been obtained and a slope efficiency of 17.5% has been observed using an output coupler of 4.5%. The low losses in combination with the high numerical aperture (0.75) and the thickness of the structures make them suitable for high-power diode pumping.

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Published date: 2004
Keywords: laser materials, lasers, waveguides, optical waveguides, pulsed laser deposition
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Identifiers

Local EPrints ID: 13942
URI: http://eprints.soton.ac.uk/id/eprint/13942
DOI: doi:10.1007/s00339-004-2718-7
ISSN: 0947-8396
PURE UUID: 757e9d47-682e-4387-bab8-677bf9be2dc8
ORCID for David Shepherd: ORCID iD orcid.org/0000-0002-4561-8184
ORCID for R.W. Eason: ORCID iD orcid.org/0000-0001-9704-2204

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Date deposited: 12 Jan 2005
Last modified: 16 Mar 2024 02:39

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Contributors

Author: C. Grivas
Author: Timothy May-Smith
Author: David Shepherd ORCID iD
Author: R.W. Eason ORCID iD

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