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Thermionic field emission at electrodeposited Ni–Si Schottky barriers

Thermionic field emission at electrodeposited Ni–Si Schottky barriers
Thermionic field emission at electrodeposited Ni–Si Schottky barriers
Current transport at Schottky barriers is of particular interest for spin injection and detection in semiconductors. Here, electrodeposited Ni–Si contacts are fabricated and the transport mechanisms through the formed Schottky barrier are studied. Highly doped Si is used to enable tunneling currents. I–V, C–V and low-temperature I–V measurements are performed and the results are interpreted using tunneling theory for Schottky barriers and recent models for spatially distributed barrier heights. It is shown that, contrary to the case of lowly doped Si where thermionic emission dominates, tunneling is the dominant mechanism for reverse and low forward bias for highly doped Si. An exponential reverse bias I–V behavior with negative temperature coefficient is reported. An explanation can be found on the rapid decrease of the reverse bias I–V slope with temperature predicted by Padovani and Stratton for thermionic field emission in conjunction with the increase of the Schottky barrier height with temperature suggested for spatially distributed barrier heights.
schottky barriers, tunneling, spintronics
0038-1101
1032-1038
Kiziroglou, M. E.
2ca017a8-1046-4344-8d12-8dcfbb479a7e
Li, X.
df4a6c0e-3b99-4c6a-9be4-ab53d0541c11
Zhukov, A. A.
75d64070-ea67-4984-ae75-4d5798cd3c61
de Groot, P.A.J.
98c21141-cf90-4e5c-8f2b-d2aae8efb84d
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Kiziroglou, M. E.
2ca017a8-1046-4344-8d12-8dcfbb479a7e
Li, X.
df4a6c0e-3b99-4c6a-9be4-ab53d0541c11
Zhukov, A. A.
75d64070-ea67-4984-ae75-4d5798cd3c61
de Groot, P.A.J.
98c21141-cf90-4e5c-8f2b-d2aae8efb84d
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c

Kiziroglou, M. E., Li, X., Zhukov, A. A., de Groot, P.A.J. and de Groot, C.H. (2008) Thermionic field emission at electrodeposited Ni–Si Schottky barriers. Solid-State Electronics, 52 (7), 1032-1038. (doi:10.1016/j.sse.2008.03.002).

Record type: Article

Abstract

Current transport at Schottky barriers is of particular interest for spin injection and detection in semiconductors. Here, electrodeposited Ni–Si contacts are fabricated and the transport mechanisms through the formed Schottky barrier are studied. Highly doped Si is used to enable tunneling currents. I–V, C–V and low-temperature I–V measurements are performed and the results are interpreted using tunneling theory for Schottky barriers and recent models for spatially distributed barrier heights. It is shown that, contrary to the case of lowly doped Si where thermionic emission dominates, tunneling is the dominant mechanism for reverse and low forward bias for highly doped Si. An exponential reverse bias I–V behavior with negative temperature coefficient is reported. An explanation can be found on the rapid decrease of the reverse bias I–V slope with temperature predicted by Padovani and Stratton for thermionic field emission in conjunction with the increase of the Schottky barrier height with temperature suggested for spatially distributed barrier heights.

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e-pub ahead of print date: 23 April 2008
Published date: July 2008
Keywords: schottky barriers, tunneling, spintronics
Organisations: University of Southampton

Identifiers

Local EPrints ID: 143941
URI: https://eprints.soton.ac.uk/id/eprint/143941
ISSN: 0038-1101
PURE UUID: 2a0ff846-844f-47e6-acf1-087c484d8aa1
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

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Date deposited: 13 Apr 2010 15:23
Last modified: 20 Jul 2019 01:04

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Contributors

Author: M. E. Kiziroglou
Author: X. Li
Author: A. A. Zhukov
Author: P.A.J. de Groot
Author: C.H. de Groot ORCID iD

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