Analysis of thermionic emission from electrodeposited Ni–Si Schottky barriers
Analysis of thermionic emission from electrodeposited Ni–Si Schottky barriers
Ni–Si Schottky barriers are fabricated by electrodeposition using n on n+ Si substrates. I–V, C–V and low temperature I–V measurements are presented. A high-quality Schottky barrier with extremely low reverse leakage current is revealed. The results are shown to fit an inhomogeneous barrier model for thermionic emission over a Schottky barrier proposed by Werner and Guttler [J.H. Werner, H.H. Guttler, Barrier inhomogeneities at Schottky contacts, J. Appl. Phys. 69 (3) (1991) 1522–1533]. A mean value of 0.76 V and a standard deviation of 66 mV is obtained for the Schottky barrier height at room temperature with a linear bias dependence. X-ray diffraction and scanning electron microscopy measurements reveal a polycrystalline Ni film with grains that span from the Ni–Si interface to the top of the Ni layer. The variation in Ni orientation is suggested as a possible source of the spatial distribution of the Schottky barrier height.
magnetic materials, electrodeposition, schottky barriers
508-513
Kiziroglou, M.E.
5d55ba87-ea00-47fa-917b-c1e538ae6dd2
Zhukov, A.
75d64070-ea67-4984-ae75-4d5798cd3c61
LI, X
5e4a046d-1fb8-4dbd-a7e3-9e0fd520aa84
Gonzalez, D.C.
da7d4dbc-bc2e-4b3c-bd8c-9312fe938d4a
de Groot, P.A.J.
98c21141-cf90-4e5c-8f2b-d2aae8efb84d
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
December 2006
Kiziroglou, M.E.
5d55ba87-ea00-47fa-917b-c1e538ae6dd2
Zhukov, A.
75d64070-ea67-4984-ae75-4d5798cd3c61
LI, X
5e4a046d-1fb8-4dbd-a7e3-9e0fd520aa84
Gonzalez, D.C.
da7d4dbc-bc2e-4b3c-bd8c-9312fe938d4a
de Groot, P.A.J.
98c21141-cf90-4e5c-8f2b-d2aae8efb84d
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Kiziroglou, M.E., Zhukov, A., LI, X, Gonzalez, D.C., de Groot, P.A.J., Bartlett, Philip N. and de Groot, C.H.
(2006)
Analysis of thermionic emission from electrodeposited Ni–Si Schottky barriers.
Solid State Communications, 140 (11-12), .
(doi:10.1016/j.ssc.2006.09.027).
Abstract
Ni–Si Schottky barriers are fabricated by electrodeposition using n on n+ Si substrates. I–V, C–V and low temperature I–V measurements are presented. A high-quality Schottky barrier with extremely low reverse leakage current is revealed. The results are shown to fit an inhomogeneous barrier model for thermionic emission over a Schottky barrier proposed by Werner and Guttler [J.H. Werner, H.H. Guttler, Barrier inhomogeneities at Schottky contacts, J. Appl. Phys. 69 (3) (1991) 1522–1533]. A mean value of 0.76 V and a standard deviation of 66 mV is obtained for the Schottky barrier height at room temperature with a linear bias dependence. X-ray diffraction and scanning electron microscopy measurements reveal a polycrystalline Ni film with grains that span from the Ni–Si interface to the top of the Ni layer. The variation in Ni orientation is suggested as a possible source of the spatial distribution of the Schottky barrier height.
Text
kiziroglou508.pdf
- Other
More information
Published date: December 2006
Keywords:
magnetic materials, electrodeposition, schottky barriers
Identifiers
Local EPrints ID: 143981
URI: http://eprints.soton.ac.uk/id/eprint/143981
PURE UUID: e7287638-288e-43e6-a9ae-2897c153f01e
Catalogue record
Date deposited: 18 Jun 2010 08:47
Last modified: 14 Mar 2024 02:46
Export record
Altmetrics
Contributors
Author:
M.E. Kiziroglou
Author:
A. Zhukov
Author:
X LI
Author:
D.C. Gonzalez
Author:
P.A.J. de Groot
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics
