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Epitaxial growth of aligned semiconductor nanowire metamaterials for photonic applications

Epitaxial growth of aligned semiconductor nanowire metamaterials for photonic applications
Epitaxial growth of aligned semiconductor nanowire metamaterials for photonic applications
A novel class of optical metamaterials is presented consisting of high densities of aligned gallium phosphide (GaP) nanowires fabricated using metal-organic vapor phase-epitaxy. Starting from a gold island film as a catalyst for nanowire growth, a sequential combination of vapor-liquid-solid and lateral growth modes is employed to obtain a continuous tunability of the nanowire volume fraction from 7% to over 35%. By choosing different crystallographic orientations of the GaP substrate, metamaterials are designed with different nanowire orientations. The anisotropy of the nanowire building blocks results in strong optical birefringence. Polarization interferometry demonstrates a very large polarization extinction contrast of 4 × 103 combined with a sharp angular resonance which holds promise for optical sensing. Nanowire metamaterials may find applications in photonics, optoelectronics, non-linear and quantum optics, microfluidics, bio-, and gas sensing.
semiconductor nanowires, metamaterials, gallium phosphide, photonics, alignment
1616-301X
1039
Muskens, Otto L.
2284101a-f9ef-4d79-8951-a6cda5bfc7f9
Diedenhofen, Silke L.
80c0dc33-f8fb-4162-909b-25a3ab0f68a8
van Weert, Maarten H.M.
ee24d1fb-d1f4-404b-9380-bf6d963427a0
Borgström, Magnus T.
b3e4a407-ed7d-4b03-9723-849ad84a0999
Bakkers, Erik P.A.M.
8dcbe6be-8e2a-44cd-8456-63f3281beed4
Rivas, Jaime Gómez
2e9f23a2-d5b0-4e3f-bdda-bb65d3dfa560
Muskens, Otto L.
2284101a-f9ef-4d79-8951-a6cda5bfc7f9
Diedenhofen, Silke L.
80c0dc33-f8fb-4162-909b-25a3ab0f68a8
van Weert, Maarten H.M.
ee24d1fb-d1f4-404b-9380-bf6d963427a0
Borgström, Magnus T.
b3e4a407-ed7d-4b03-9723-849ad84a0999
Bakkers, Erik P.A.M.
8dcbe6be-8e2a-44cd-8456-63f3281beed4
Rivas, Jaime Gómez
2e9f23a2-d5b0-4e3f-bdda-bb65d3dfa560

Muskens, Otto L., Diedenhofen, Silke L., van Weert, Maarten H.M., Borgström, Magnus T., Bakkers, Erik P.A.M. and Rivas, Jaime Gómez (2008) Epitaxial growth of aligned semiconductor nanowire metamaterials for photonic applications. Advanced Functional Materials, 18 (7), 1039. (doi:10.1002/adfm.200701337).

Record type: Article

Abstract

A novel class of optical metamaterials is presented consisting of high densities of aligned gallium phosphide (GaP) nanowires fabricated using metal-organic vapor phase-epitaxy. Starting from a gold island film as a catalyst for nanowire growth, a sequential combination of vapor-liquid-solid and lateral growth modes is employed to obtain a continuous tunability of the nanowire volume fraction from 7% to over 35%. By choosing different crystallographic orientations of the GaP substrate, metamaterials are designed with different nanowire orientations. The anisotropy of the nanowire building blocks results in strong optical birefringence. Polarization interferometry demonstrates a very large polarization extinction contrast of 4 × 103 combined with a sharp angular resonance which holds promise for optical sensing. Nanowire metamaterials may find applications in photonics, optoelectronics, non-linear and quantum optics, microfluidics, bio-, and gas sensing.

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More information

Published date: 11 April 2008
Keywords: semiconductor nanowires, metamaterials, gallium phosphide, photonics, alignment

Identifiers

Local EPrints ID: 144333
URI: http://eprints.soton.ac.uk/id/eprint/144333
ISSN: 1616-301X
PURE UUID: 0b77614d-7a78-42aa-bd87-9bb219354f59
ORCID for Otto L. Muskens: ORCID iD orcid.org/0000-0003-0693-5504

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Date deposited: 14 Apr 2010 10:00
Last modified: 17 Dec 2019 01:42

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