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Kelvin force gradient microscopy of pBTTT transistors in both the linear and saturation electrical regimes

Kelvin force gradient microscopy of pBTTT transistors in both the linear and saturation electrical regimes
Kelvin force gradient microscopy of pBTTT transistors in both the linear and saturation electrical regimes
Kelvin force gradient microscopy of pBTTT transistors biased in both the linear and saturation electrical regimes is presented. The linear regime potential profiles are dominated by the contacts and the true material mobility, 0.11±0.01?cm2?V?1?s?1, is ten times higher than that derived from device electrical characteristics. In the saturation regime the potential profiles are well fitted by a simple model assuming a very weakly gate potential dependent mobility in the range 0.021–0.028?cm2?V?1?s?1. These measurements indicate that contrary to the conclusion drawn from the device electrical characteristics, the linear mobility is larger than the saturation mobility.
0003-6951
143304
Bain, S.
60ef331c-3477-49c3-8b77-dfb8615adbe8
Smith, D.C.
d9b2c02d-b7ea-498b-9ea1-208a1681536f
Wilson, N.R.
448b7342-0b6d-4c1a-8f35-f2cc3dd658c3
Carrasco-Orozco, M.
4daa02c6-3053-40dc-8cbe-14ca5b40555d
Bain, S.
60ef331c-3477-49c3-8b77-dfb8615adbe8
Smith, D.C.
d9b2c02d-b7ea-498b-9ea1-208a1681536f
Wilson, N.R.
448b7342-0b6d-4c1a-8f35-f2cc3dd658c3
Carrasco-Orozco, M.
4daa02c6-3053-40dc-8cbe-14ca5b40555d

Bain, S., Smith, D.C., Wilson, N.R. and Carrasco-Orozco, M. (2009) Kelvin force gradient microscopy of pBTTT transistors in both the linear and saturation electrical regimes. Applied Physics Letters, 95 (14), 143304. (doi:10.1063/1.3242001).

Record type: Article

Abstract

Kelvin force gradient microscopy of pBTTT transistors biased in both the linear and saturation electrical regimes is presented. The linear regime potential profiles are dominated by the contacts and the true material mobility, 0.11±0.01?cm2?V?1?s?1, is ten times higher than that derived from device electrical characteristics. In the saturation regime the potential profiles are well fitted by a simple model assuming a very weakly gate potential dependent mobility in the range 0.021–0.028?cm2?V?1?s?1. These measurements indicate that contrary to the conclusion drawn from the device electrical characteristics, the linear mobility is larger than the saturation mobility.

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Published date: 5 October 2009

Identifiers

Local EPrints ID: 144479
URI: https://eprints.soton.ac.uk/id/eprint/144479
ISSN: 0003-6951
PURE UUID: 8971e9cf-1dd0-4466-b74b-32911970a122

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Date deposited: 14 Apr 2010 09:51
Last modified: 18 Jul 2017 23:08

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