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Growth of single-walled carbon nanotubes using germanium nanocrystals formed by implantation

Growth of single-walled carbon nanotubes using germanium nanocrystals formed by implantation
Growth of single-walled carbon nanotubes using germanium nanocrystals formed by implantation
This paper presents a complementary metal oxide semiconductor compatible method for the chemical vapor deposition of singlewalled carbon nanotubes. The method uses Ge implantation into a SiO2 layer to create Ge nanocrystals, which are then used to produce SWNTs. The results of atomic force microscopy and scanning electron microscopy analyses indicate that Ge implantation provides good control of particle size and delivers a well-controlled SWNT growth process. The SWNT area density of 4.1 ± 1.2 µm in length/µm2 obtained from the Ge nanocrystals is comparable to that obtained from metal-catalyst-based methods used to fabricate SWNT field-effect transistors. A carbon implantation after Ge nanocrystal formation significantly enhances the process operating window for the growth of the SWNTs and increases the area density.
carbon nanotubes, germanium nanoparticles, nanocrystals, germanium, ion implantation
0013-4651
K144-K148
Uchino, Takashi
53356d82-f008-4b0e-8c7e-359c0d283b6c
Ayre, G.N.
0a7c003b-00c1-4412-bd40-03005e7310c2
Smith, D.C.
d9b2c02d-b7ea-498b-9ea1-208a1681536f
Hutchison, J.L.
65f59105-495d-42a5-9c51-b62c82c3044e
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Uchino, Takashi
53356d82-f008-4b0e-8c7e-359c0d283b6c
Ayre, G.N.
0a7c003b-00c1-4412-bd40-03005e7310c2
Smith, D.C.
d9b2c02d-b7ea-498b-9ea1-208a1681536f
Hutchison, J.L.
65f59105-495d-42a5-9c51-b62c82c3044e
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Uchino, Takashi, Ayre, G.N., Smith, D.C., Hutchison, J.L., de Groot, C.H. and Ashburn, Peter (2009) Growth of single-walled carbon nanotubes using germanium nanocrystals formed by implantation. Journal of the Electrochemical Society, 156 (8), K144-K148. (doi:10.1149/1.3147248).

Record type: Article

Abstract

This paper presents a complementary metal oxide semiconductor compatible method for the chemical vapor deposition of singlewalled carbon nanotubes. The method uses Ge implantation into a SiO2 layer to create Ge nanocrystals, which are then used to produce SWNTs. The results of atomic force microscopy and scanning electron microscopy analyses indicate that Ge implantation provides good control of particle size and delivers a well-controlled SWNT growth process. The SWNT area density of 4.1 ± 1.2 µm in length/µm2 obtained from the Ge nanocrystals is comparable to that obtained from metal-catalyst-based methods used to fabricate SWNT field-effect transistors. A carbon implantation after Ge nanocrystal formation significantly enhances the process operating window for the growth of the SWNTs and increases the area density.

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More information

Published date: 10 June 2009
Additional Information: Imported from ISI Web of Science
Keywords: carbon nanotubes, germanium nanoparticles, nanocrystals, germanium, ion implantation
Organisations: Quantum, Light & Matter Group

Identifiers

Local EPrints ID: 144503
URI: https://eprints.soton.ac.uk/id/eprint/144503
ISSN: 0013-4651
PURE UUID: 6e3e453c-d92b-47cb-b9fc-35679ac3bd5e
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 14 Apr 2010 10:16
Last modified: 20 Jul 2019 01:04

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