Afzaal, Mohammad, Aksomaityte, Gabriele, O'Brien, Paul, Cheng, Fei, George, Michael, Hector, Andrew, Howdle, Steven, Hyde, Jason R., Levason, William, Malik, Mohamed, Mallik, Kanad, Nguyen, Chinh, Reid, Gillian, Sazio, Pier, Smith, David C., Webster, Michael, Wilson, James, Yang, Jixin and Zhang, Wenjian (2009) Supercritical chemical fluid deposition of high quality compound semiconductors. ECS Transactions, 25 (8), 1193-1197. (doi:10.1149/1.3207724).
Abstract
The main advantage of deposition from supercritical fluids over conventional CVD is the ability to fill high aspect ratio templates. Deposition of metals, indirect semiconductors and insulators into templates with dimensions down to 3 nm has been demonstrated by others, with no apparent pore blocking. In this paper we present a demonstration that it is also possible to deposit high quality, luminescent compound semiconductor films from supercritical CO2 or CO2/hexane mixtures. Depositions of CdS and III-V materials such as InP have been achieved through careful optimisation of precursor chemistry, reactor geometry and deposition conditions, supported by detailed measurements of the semiconductor film properties.
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