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Supercritical chemical fluid deposition of high quality compound semiconductors

Supercritical chemical fluid deposition of high quality compound semiconductors
Supercritical chemical fluid deposition of high quality compound semiconductors
The main advantage of deposition from supercritical fluids over conventional CVD is the ability to fill high aspect ratio templates. Deposition of metals, indirect semiconductors and insulators into templates with dimensions down to 3 nm has been demonstrated by others, with no apparent pore blocking. In this paper we present a demonstration that it is also possible to deposit high quality, luminescent compound semiconductor films from supercritical CO2 or CO2/hexane mixtures. Depositions of CdS and III-V materials such as InP have been achieved through careful optimisation of precursor chemistry, reactor geometry and deposition conditions, supported by detailed measurements of the semiconductor film properties.
1938-5862
1193-1197
Afzaal, Mohammad
15c0c0f8-acd5-4e73-9b23-e1aa8f2c42d3
Aksomaityte, Gabriele
ae55a05a-b280-4324-af07-c4fa8ce7ac39
O'Brien, Paul
d4e8ed00-3b79-4b44-a8ac-3a5d837366b7
Cheng, Fei
a0339c70-2a78-4078-8845-62759ac926d3
George, Michael
d39ada3f-bfba-4651-92fd-6ccabfd3ac6f
Hector, Andrew
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Howdle, Steven
2cc7f6ee-4645-4118-9c5e-d987230bfce1
Hyde, Jason R.
239d9b15-31f2-4506-9b5c-2990ba17e734
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Malik, Mohamed
0a651dcc-a4e5-4d73-b6b1-bb18756de906
Mallik, Kanad
013bdafd-6ae0-463e-89a4-6ef1301c5c2f
Nguyen, Chinh
b9a22bb1-3212-480e-bed7-5a3dbb48ef4e
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Sazio, Pier
0d6200b5-9947-469a-8e97-9147da8a7158
Smith, David
d9b2c02d-b7ea-498b-9ea1-208a1681536f
Webster, Michael
f26c6e36-cb2e-486e-b2ed-b0d25a3a71f7
Wilson, James
aec7fd40-41c6-4f44-a1b0-ff60f03676b5
Yang, Jixin
15b184c3-6dd3-44ce-add1-c2673516becc
Zhang, Wenjian
1f80ac5e-d4c2-4720-b19e-be700cd411e7
Afzaal, Mohammad
15c0c0f8-acd5-4e73-9b23-e1aa8f2c42d3
Aksomaityte, Gabriele
ae55a05a-b280-4324-af07-c4fa8ce7ac39
O'Brien, Paul
d4e8ed00-3b79-4b44-a8ac-3a5d837366b7
Cheng, Fei
a0339c70-2a78-4078-8845-62759ac926d3
George, Michael
d39ada3f-bfba-4651-92fd-6ccabfd3ac6f
Hector, Andrew
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Howdle, Steven
2cc7f6ee-4645-4118-9c5e-d987230bfce1
Hyde, Jason R.
239d9b15-31f2-4506-9b5c-2990ba17e734
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Malik, Mohamed
0a651dcc-a4e5-4d73-b6b1-bb18756de906
Mallik, Kanad
013bdafd-6ae0-463e-89a4-6ef1301c5c2f
Nguyen, Chinh
b9a22bb1-3212-480e-bed7-5a3dbb48ef4e
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Sazio, Pier
0d6200b5-9947-469a-8e97-9147da8a7158
Smith, David
d9b2c02d-b7ea-498b-9ea1-208a1681536f
Webster, Michael
f26c6e36-cb2e-486e-b2ed-b0d25a3a71f7
Wilson, James
aec7fd40-41c6-4f44-a1b0-ff60f03676b5
Yang, Jixin
15b184c3-6dd3-44ce-add1-c2673516becc
Zhang, Wenjian
1f80ac5e-d4c2-4720-b19e-be700cd411e7

Afzaal, Mohammad, Aksomaityte, Gabriele, O'Brien, Paul, Cheng, Fei, George, Michael, Hector, Andrew, Howdle, Steven, Hyde, Jason R., Levason, William, Malik, Mohamed, Mallik, Kanad, Nguyen, Chinh, Reid, Gillian, Sazio, Pier, Smith, David, Webster, Michael, Wilson, James, Yang, Jixin and Zhang, Wenjian (2009) Supercritical chemical fluid deposition of high quality compound semiconductors ECS Transactions, 25, (8), pp. 1193-1197.

Record type: Article

Abstract

The main advantage of deposition from supercritical fluids over conventional CVD is the ability to fill high aspect ratio templates. Deposition of metals, indirect semiconductors and insulators into templates with dimensions down to 3 nm has been demonstrated by others, with no apparent pore blocking. In this paper we present a demonstration that it is also possible to deposit high quality, luminescent compound semiconductor films from supercritical CO2 or CO2/hexane mixtures. Depositions of CdS and III-V materials such as InP have been achieved through careful optimisation of precursor chemistry, reactor geometry and deposition conditions, supported by detailed measurements of the semiconductor film properties.

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More information

Published date: October 2009
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 145985
URI: http://eprints.soton.ac.uk/id/eprint/145985
ISSN: 1938-5862
PURE UUID: 1b2b2d2a-58e2-434b-889b-740349ea1ec5
ORCID for Andrew Hector: ORCID iD orcid.org/0000-0002-9964-2163
ORCID for William Levason: ORCID iD orcid.org/0000-0003-3540-0971
ORCID for Pier Sazio: ORCID iD orcid.org/0000-0002-6506-9266

Catalogue record

Date deposited: 20 Apr 2010 09:28
Last modified: 12 Oct 2017 12:49

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Contributors

Author: Mohammad Afzaal
Author: Gabriele Aksomaityte
Author: Paul O'Brien
Author: Fei Cheng
Author: Michael George
Author: Andrew Hector ORCID iD
Author: Steven Howdle
Author: Jason R. Hyde
Author: William Levason ORCID iD
Author: Mohamed Malik
Author: Kanad Mallik
Author: Chinh Nguyen
Author: Gillian Reid
Author: Pier Sazio ORCID iD
Author: David Smith
Author: Michael Webster
Author: James Wilson
Author: Jixin Yang
Author: Wenjian Zhang

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