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Photoconductively loaded plasmonic nanoantenna as building block for ultracompact optical switches

Photoconductively loaded plasmonic nanoantenna as building block for ultracompact optical switches
Photoconductively loaded plasmonic nanoantenna as building block for ultracompact optical switches
We propose and explore theoretically a new concept of ultrafast optical switches based on nonlinear plasmonic nanoantennas. The antenna nanoswitch operates on the transition from the capacitive to conductive coupling regimes between two closely spaced metal nanorods. By filling the antenna gap with amorphous silicon, progressive antenna-gap loading is achieved due to variations in the free-carrier density in the semiconductor. Strong modification of the antenna response is observed both in the far-field response and in the local near-field intensity. The large modulation depth, low switching threshold, and potentially ultrafast time response of antenna switches holds promise for applications ranging from integrated nanophotonic circuits to quantum information devices.
1530-6984
1741-1746
Large, Nicolas
549f47a1-04ce-4176-acb9-6a69ea0506b5
Abb, Martina
d1aa3add-7761-4c4f-8a3d-7da3084deb33
Aizpurua, Javier
17705349-38e3-4089-adba-547d02449095
Muskens, Otto L.
2284101a-f9ef-4d79-8951-a6cda5bfc7f9
Large, Nicolas
549f47a1-04ce-4176-acb9-6a69ea0506b5
Abb, Martina
d1aa3add-7761-4c4f-8a3d-7da3084deb33
Aizpurua, Javier
17705349-38e3-4089-adba-547d02449095
Muskens, Otto L.
2284101a-f9ef-4d79-8951-a6cda5bfc7f9

Large, Nicolas, Abb, Martina, Aizpurua, Javier and Muskens, Otto L. (2010) Photoconductively loaded plasmonic nanoantenna as building block for ultracompact optical switches. Nano Letters, 10 (5), 1741-1746. (doi:10.1021/nl1001636).

Record type: Article

Abstract

We propose and explore theoretically a new concept of ultrafast optical switches based on nonlinear plasmonic nanoantennas. The antenna nanoswitch operates on the transition from the capacitive to conductive coupling regimes between two closely spaced metal nanorods. By filling the antenna gap with amorphous silicon, progressive antenna-gap loading is achieved due to variations in the free-carrier density in the semiconductor. Strong modification of the antenna response is observed both in the far-field response and in the local near-field intensity. The large modulation depth, low switching threshold, and potentially ultrafast time response of antenna switches holds promise for applications ranging from integrated nanophotonic circuits to quantum information devices.

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Published date: 20 April 2010
Organisations: Quantum, Light & Matter Group

Identifiers

Local EPrints ID: 149743
URI: http://eprints.soton.ac.uk/id/eprint/149743
ISSN: 1530-6984
PURE UUID: 765d220f-dd30-44d9-bb23-2cb13aaeee03
ORCID for Otto L. Muskens: ORCID iD orcid.org/0000-0003-0693-5504

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Date deposited: 04 May 2010 08:52
Last modified: 26 Nov 2019 01:41

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Contributors

Author: Nicolas Large
Author: Martina Abb
Author: Javier Aizpurua
Author: Otto L. Muskens ORCID iD

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