Picosecond pulse generation with 1.5 micron passively modelocked surface-emitting semiconductor laser
Picosecond pulse generation with 1.5 micron passively modelocked surface-emitting semiconductor laser
The authors report the first demonstration of an optically pumped passively modelocked surface-emitting semiconductor laser operating in the 1.5 /spl mu/m region. The modelocked laser emits pulses of 6.5 ps full width at half maximum duration with an average power of 13.5 mW at a fundamental repetition rate of 1.342 GHz. The peak power was 1.6 W.
846-847
Hoogland, S.
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Garnache, A.
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Sagnes, I.
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Paldus, B.
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Weingarten, K.J.
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Grange, R.
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Haiml, M.
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Paschotta, R.
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Keller, U.
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Tropper, A.C.
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30 May 2003
Hoogland, S.
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Garnache, A.
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Sagnes, I.
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Paldus, B.
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Weingarten, K.J.
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Grange, R.
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Haiml, M.
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Paschotta, R.
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Keller, U.
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Tropper, A.C.
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Hoogland, S., Garnache, A., Sagnes, I., Paldus, B., Weingarten, K.J., Grange, R., Haiml, M., Paschotta, R., Keller, U. and Tropper, A.C.
(2003)
Picosecond pulse generation with 1.5 micron passively modelocked surface-emitting semiconductor laser.
Electronics Letters, 39 (11), .
(doi:10.1049/el:20030576).
Abstract
The authors report the first demonstration of an optically pumped passively modelocked surface-emitting semiconductor laser operating in the 1.5 /spl mu/m region. The modelocked laser emits pulses of 6.5 ps full width at half maximum duration with an average power of 13.5 mW at a fundamental repetition rate of 1.342 GHz. The peak power was 1.6 W.
Text
HooglandELett03.pdf
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Published date: 30 May 2003
Identifiers
Local EPrints ID: 15018
URI: http://eprints.soton.ac.uk/id/eprint/15018
ISSN: 0013-5194
PURE UUID: 3d5a5028-1d7e-4d97-aff3-16d6f5c84b99
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Date deposited: 11 Mar 2005
Last modified: 15 Mar 2024 05:32
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Contributors
Author:
S. Hoogland
Author:
A. Garnache
Author:
I. Sagnes
Author:
B. Paldus
Author:
K.J. Weingarten
Author:
R. Grange
Author:
M. Haiml
Author:
R. Paschotta
Author:
U. Keller
Author:
A.C. Tropper
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