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Passively mode-locked diode-pumped surface-emitting semiconductor laser

Passively mode-locked diode-pumped surface-emitting semiconductor laser
Passively mode-locked diode-pumped surface-emitting semiconductor laser
A surface-emitting semiconductor laser has been passively mode locked in an external cavity incorporating a semiconductor saturable absorber mirror. The gain medium consists of a stack of 12 InGaAs-GaAs strained quantum wells, grown above a Bragg mirror structure, and pumped optically by a high-brightness diode laser. The mode-locked laser emits pulses of 22 ps full-width at half maximum duration at 1030 nm, with a repetition rate variable around 4.4 GHz.
1041-1135
1135-1137
Hoogland, S.
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Dhanjal, S.
a3f4fa8d-654f-4162-bd38-67c9b2d2f136
Tropper, A.C.
f3505426-e0d5-4e91-aed3-aecdb44b393c
Roberts, J.S.
c4eae59e-8356-4436-b317-670038103d16
Häring, R.
6251f72c-3183-4917-a6bb-7f2323d76195
Paschotta, R.
d9e3d753-48c1-405f-b31e-e662f23a70a4
Morier-Genoud, F.
278a30bf-4939-47ed-b523-26e3f017cd4e
Keller, U.
799a6b8e-4423-40a2-be88-ebc521eb9952
Hoogland, S.
4cb41793-ad90-41f3-9944-bc8774fac5cb
Dhanjal, S.
a3f4fa8d-654f-4162-bd38-67c9b2d2f136
Tropper, A.C.
f3505426-e0d5-4e91-aed3-aecdb44b393c
Roberts, J.S.
c4eae59e-8356-4436-b317-670038103d16
Häring, R.
6251f72c-3183-4917-a6bb-7f2323d76195
Paschotta, R.
d9e3d753-48c1-405f-b31e-e662f23a70a4
Morier-Genoud, F.
278a30bf-4939-47ed-b523-26e3f017cd4e
Keller, U.
799a6b8e-4423-40a2-be88-ebc521eb9952

Hoogland, S., Dhanjal, S., Tropper, A.C., Roberts, J.S., Häring, R., Paschotta, R., Morier-Genoud, F. and Keller, U. (2000) Passively mode-locked diode-pumped surface-emitting semiconductor laser. IEEE Photonics Technology Letters, 12 (9), 1135-1137. (doi:10.1109/68.874213).

Record type: Article

Abstract

A surface-emitting semiconductor laser has been passively mode locked in an external cavity incorporating a semiconductor saturable absorber mirror. The gain medium consists of a stack of 12 InGaAs-GaAs strained quantum wells, grown above a Bragg mirror structure, and pumped optically by a high-brightness diode laser. The mode-locked laser emits pulses of 22 ps full-width at half maximum duration at 1030 nm, with a repetition rate variable around 4.4 GHz.

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More information

Published date: September 2000
Organisations: Optoelectronics Research Centre, Physics & Astronomy

Identifiers

Local EPrints ID: 15019
URI: http://eprints.soton.ac.uk/id/eprint/15019
ISSN: 1041-1135
PURE UUID: 77490b3b-d96c-4d9d-869e-b7930293cd52

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Date deposited: 11 Mar 2005
Last modified: 26 Apr 2022 18:04

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Contributors

Author: S. Hoogland
Author: S. Dhanjal
Author: A.C. Tropper
Author: J.S. Roberts
Author: R. Häring
Author: R. Paschotta
Author: F. Morier-Genoud
Author: U. Keller

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