Inverted deposition and high-velocity spinning technique to develop buried planar chalcogenide glass waveguides for highly nonlinear integrated optics
Inverted deposition and high-velocity spinning technique to develop buried planar chalcogenide glass waveguides for highly nonlinear integrated optics
We report on buried planar waveguides in a highly nonlinear infrared transmitting chalcogenide glass, fabricated using a combination of inverted deposition of the molten glass phase and high-velocity spinning. Films of gallium lanthanum sulphide (Ga:La:S) glass were deposited onto an expansion coefficient matched Ga:La:S cladding substrate. These amorphous films, with an optimized composition designed to be resistant against crystallization, were observed to have an excellent interface quality and uniformity.
The designed planar chip had a buried core, 6 micron thick in the vertical direction, in single-mode operation at 1.064 micron and a measured propagation loss of <0.2 dB cm-1. Through this technique waveguides from Ga:La:S glass, a highly versatile optical semiconductor material, can potentially be used in nonlinear applications as well as provide passive and active integrated optic functionality into the infrared beyond 5 micron.
0941021-3
Mairaj, A.K.
69f81e26-b09f-4c34-83ee-4388f94fa147
Curry, R.J.
1ae2a4da-7efe-4333-a34e-0ec20ae95154
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
2005
Mairaj, A.K.
69f81e26-b09f-4c34-83ee-4388f94fa147
Curry, R.J.
1ae2a4da-7efe-4333-a34e-0ec20ae95154
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Mairaj, A.K., Curry, R.J. and Hewak, D.W.
(2005)
Inverted deposition and high-velocity spinning technique to develop buried planar chalcogenide glass waveguides for highly nonlinear integrated optics.
Applied Physics Letters, 86 (1), .
(doi:10.1063/1.1856686).
Abstract
We report on buried planar waveguides in a highly nonlinear infrared transmitting chalcogenide glass, fabricated using a combination of inverted deposition of the molten glass phase and high-velocity spinning. Films of gallium lanthanum sulphide (Ga:La:S) glass were deposited onto an expansion coefficient matched Ga:La:S cladding substrate. These amorphous films, with an optimized composition designed to be resistant against crystallization, were observed to have an excellent interface quality and uniformity.
The designed planar chip had a buried core, 6 micron thick in the vertical direction, in single-mode operation at 1.064 micron and a measured propagation loss of <0.2 dB cm-1. Through this technique waveguides from Ga:La:S glass, a highly versatile optical semiconductor material, can potentially be used in nonlinear applications as well as provide passive and active integrated optic functionality into the infrared beyond 5 micron.
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Published date: 2005
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Local EPrints ID: 15026
URI: http://eprints.soton.ac.uk/id/eprint/15026
ISSN: 0003-6951
PURE UUID: 944768f9-be41-4d73-a3a7-a00773d36bfc
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Date deposited: 11 May 2006
Last modified: 15 Mar 2024 05:32
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Author:
A.K. Mairaj
Author:
R.J. Curry
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