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Quantitative determination of charge transfer parameters of photorefractive BaTiO3 : Rh from EPR-based defect studies

Quantitative determination of charge transfer parameters of photorefractive BaTiO3 : Rh from EPR-based defect studies
Quantitative determination of charge transfer parameters of photorefractive BaTiO3 : Rh from EPR-based defect studies
Optical absorption bands can be used as fingerprints of defects and their charge states in insulators and semiconductors. On the basis of the photochromicity usually shown by such materials, a method is introduced by which the optical bands are assigned to the defects and their charge states. It is based on simultaneous measurements of the light-induced changes of the optical absorption and of the corresponding EPR signals. Moreover, indirectly optical bands of EPR-silent defects can also be labelled in this way, strongly widening the scope of EPR based defect studies. We apply this method to the infrared-sensitive photorefractive system BaTiO3:Rh, where illumination leads to recharging among the valence states Rh5+, Rh4+ and Rh3+. The values of all parameters governing the charge transfers responsible are inferred from the magnitude of the absorption bands, the absolute determination of their absorption cross-sections and the kinetics of the absorption changes under illumination. In contrast to previous investigations, these parameters are deduced independently of photorefractive measurements.
0953-8984
415-429
Veber, C.
cf8718cf-360b-4105-8666-2bb6d74467df
Meyer, M.
25c726d1-8f52-4a77-b913-ae79d4930cd1
Schirmer, O.F.
c5a8d08b-d03f-4a4e-8090-9070a952e8ee
Kaczmarek, M.
408ec59b-8dba-41c1-89d0-af846d1bf327
Veber, C.
cf8718cf-360b-4105-8666-2bb6d74467df
Meyer, M.
25c726d1-8f52-4a77-b913-ae79d4930cd1
Schirmer, O.F.
c5a8d08b-d03f-4a4e-8090-9070a952e8ee
Kaczmarek, M.
408ec59b-8dba-41c1-89d0-af846d1bf327

Veber, C., Meyer, M., Schirmer, O.F. and Kaczmarek, M. (2003) Quantitative determination of charge transfer parameters of photorefractive BaTiO3 : Rh from EPR-based defect studies. Journal of Physics: Condensed Matter, 15 (3), 415-429. (doi:10.1088/0953-8984/15/3/307).

Record type: Article

Abstract

Optical absorption bands can be used as fingerprints of defects and their charge states in insulators and semiconductors. On the basis of the photochromicity usually shown by such materials, a method is introduced by which the optical bands are assigned to the defects and their charge states. It is based on simultaneous measurements of the light-induced changes of the optical absorption and of the corresponding EPR signals. Moreover, indirectly optical bands of EPR-silent defects can also be labelled in this way, strongly widening the scope of EPR based defect studies. We apply this method to the infrared-sensitive photorefractive system BaTiO3:Rh, where illumination leads to recharging among the valence states Rh5+, Rh4+ and Rh3+. The values of all parameters governing the charge transfers responsible are inferred from the magnitude of the absorption bands, the absolute determination of their absorption cross-sections and the kinetics of the absorption changes under illumination. In contrast to previous investigations, these parameters are deduced independently of photorefractive measurements.

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Submitted date: 29 August 2002
Published date: 29 January 2003
Organisations: Quantum, Light & Matter Group

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Local EPrints ID: 15089
URI: https://eprints.soton.ac.uk/id/eprint/15089
ISSN: 0953-8984
PURE UUID: 06222441-2ba4-4800-9936-eb76d5374289

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Date deposited: 16 Mar 2005
Last modified: 16 Jul 2019 19:12

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