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Passively modelocked 832nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3ps pulses at 1.9 GHz repetition rate

Passively modelocked 832nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3ps pulses at 1.9 GHz repetition rate
Passively modelocked 832nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3ps pulses at 1.9 GHz repetition rate
A passively modelocked 832 nm vertical-external-cavity surface-emitting laser, producing pulses of a duration of 15.3 ps at a repetition rate of 1.9 GHz, has been demonstrated. A fast surface-recombination semiconductor saturable absorber mirror, with a bi-temporal absorption recovery characteristic, consisting of fast and slow time constants of 1.5 and 200 ps, respectively, was used to form the pulses.
0013-5194
1469-1470
Wilcox, K.G.
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Mihoubi, Z.
cd6da620-8894-41a0-b5b3-9a45d5061349
Elsmere, S.
bbb0839a-8527-4ef3-ab93-1168df50a157
Quarterman, A.
b1a0b459-b51b-400b-8a40-6975c73e38f6
Foreman, H.D.
078e0a9d-d8fd-4412-8cb0-951f3858c07a
Hashimoto, S.
abff7b88-df77-4164-8e2b-ecd53a566e86
Südmeyer, T.
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Keller, U.
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Tropper, A.
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Wilcox, K.G.
b7c8da76-3530-4cbf-aaec-ffa11c347230
Mihoubi, Z.
cd6da620-8894-41a0-b5b3-9a45d5061349
Elsmere, S.
bbb0839a-8527-4ef3-ab93-1168df50a157
Quarterman, A.
b1a0b459-b51b-400b-8a40-6975c73e38f6
Foreman, H.D.
078e0a9d-d8fd-4412-8cb0-951f3858c07a
Hashimoto, S.
abff7b88-df77-4164-8e2b-ecd53a566e86
Südmeyer, T.
7deeb76d-ffce-4969-b8d4-b742e579a8c3
Keller, U.
799a6b8e-4423-40a2-be88-ebc521eb9952
Tropper, A.
f3505426-e0d5-4e91-aed3-aecdb44b393c

Wilcox, K.G., Mihoubi, Z., Elsmere, S., Quarterman, A., Foreman, H.D., Hashimoto, S., Südmeyer, T., Keller, U. and Tropper, A. (2008) Passively modelocked 832nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3ps pulses at 1.9 GHz repetition rate. Electronics Letters, 44 (25), 1469-1470. (doi:10.1049/el:20089345).

Record type: Article

Abstract

A passively modelocked 832 nm vertical-external-cavity surface-emitting laser, producing pulses of a duration of 15.3 ps at a repetition rate of 1.9 GHz, has been demonstrated. A fast surface-recombination semiconductor saturable absorber mirror, with a bi-temporal absorption recovery characteristic, consisting of fast and slow time constants of 1.5 and 200 ps, respectively, was used to form the pulses.

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Published date: 4 December 2008

Identifiers

Local EPrints ID: 153697
URI: http://eprints.soton.ac.uk/id/eprint/153697
ISSN: 0013-5194
PURE UUID: 48e4c2fd-de78-4e54-bbdb-5b9c54d73d33

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Date deposited: 20 May 2010 15:16
Last modified: 08 Jan 2022 02:30

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Contributors

Author: K.G. Wilcox
Author: Z. Mihoubi
Author: S. Elsmere
Author: A. Quarterman
Author: H.D. Foreman
Author: S. Hashimoto
Author: T. Südmeyer
Author: U. Keller
Author: A. Tropper

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