Towards deposition of copper indium gallium sulphide/selenide materials by chemical vapour deposition
Towards deposition of copper indium gallium sulphide/selenide materials by chemical vapour deposition
Copper indium gallium sulphide thin films have been fabricated by chemical vapour deposition with metal halide precursors and S2Cl2 and H2 reactive gases. The CVD-grown CIGS thin films have been characterized by scanning electron microscopy, energy dispersive X-ray analysis, X-ray diffraction analysis, and UV-VIS-NIR spectroscopy.
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Knight, K.
8834be4f-7dce-43fe-bafd-959e5893bd51
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
16 September 2009
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Knight, K.
8834be4f-7dce-43fe-bafd-959e5893bd51
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Hewak, D.W., Knight, K. and Huang, C.C.
(2009)
Towards deposition of copper indium gallium sulphide/selenide materials by chemical vapour deposition.
Thin Film Photovoltaics, , London, United Kingdom.
1 pp
.
Record type:
Conference or Workshop Item
(Poster)
Abstract
Copper indium gallium sulphide thin films have been fabricated by chemical vapour deposition with metal halide precursors and S2Cl2 and H2 reactive gases. The CVD-grown CIGS thin films have been characterized by scanning electron microscopy, energy dispersive X-ray analysis, X-ray diffraction analysis, and UV-VIS-NIR spectroscopy.
Text
Towards deposition of copper indium gallium sulphide selenide materials by chemical vapour deposition
- Other
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Published date: 16 September 2009
Venue - Dates:
Thin Film Photovoltaics, , London, United Kingdom, 2009-09-16
Identifiers
Local EPrints ID: 154071
URI: http://eprints.soton.ac.uk/id/eprint/154071
PURE UUID: 29ed91bc-86c7-4003-86c3-efadc9e9f800
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Date deposited: 26 May 2010 14:25
Last modified: 14 Mar 2024 02:50
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Contributors
Author:
K. Knight
Author:
C.C. Huang
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