Ion track nanolithography using thick cross-linked poly(methyl methacrylate) 950 photoresist
Ion track nanolithography using thick cross-linked poly(methyl methacrylate) 950 photoresist
This study shows that poly(methyl methacrylate) (PMMA) 950 thick photoresist is a promising polymer for ion-track nanolithography templates for nanomaterials fabrication resulting in high aspect ratio nanostructures ranging from 100 to 500 with highly selective etch rates when using deep ultraviolet (DUV) cross linking polymerisation prior to the ion-track irradiation. DUV exposure times and post exposure hardbake conditions are crucial factors for achieving high aspect ratio structures. Exposure doses of 6600 mJ/cm2 with post exposure hardbake at 180 °C for 90 s gave promising preliminary results for high aspect ratio nanotemplates using thick layer of PMMA 950 photoresist.
06GE07
Koukharenko, Elena
b34ae878-2776-4088-8880-5b2bd4f33ec3
Kuleshova, Jekaterina
95594d04-c0e8-4a1f-b5cf-b3f90b314dd6
Fowler, Marcel
6f1b0e31-adca-457a-a20d-9df732de1e6a
Kok, Stephen L.
4437f118-8205-460c-9017-411f46a3643b
Tudor, Michael J.
46eea408-2246-4aa0-8b44-86169ed601ff
Beeby, Stephen P.
ba565001-2812-4300-89f1-fe5a437ecb0d
Nandhakumar, Iris
e9850fe5-1152-4df8-8a26-ed44b5564b04
White, Neil M.
c7be4c26-e419-4e5c-9420-09fc02e2ac9c
2010
Koukharenko, Elena
b34ae878-2776-4088-8880-5b2bd4f33ec3
Kuleshova, Jekaterina
95594d04-c0e8-4a1f-b5cf-b3f90b314dd6
Fowler, Marcel
6f1b0e31-adca-457a-a20d-9df732de1e6a
Kok, Stephen L.
4437f118-8205-460c-9017-411f46a3643b
Tudor, Michael J.
46eea408-2246-4aa0-8b44-86169ed601ff
Beeby, Stephen P.
ba565001-2812-4300-89f1-fe5a437ecb0d
Nandhakumar, Iris
e9850fe5-1152-4df8-8a26-ed44b5564b04
White, Neil M.
c7be4c26-e419-4e5c-9420-09fc02e2ac9c
Koukharenko, Elena, Kuleshova, Jekaterina, Fowler, Marcel, Kok, Stephen L., Tudor, Michael J., Beeby, Stephen P., Nandhakumar, Iris and White, Neil M.
(2010)
Ion track nanolithography using thick cross-linked poly(methyl methacrylate) 950 photoresist.
Japanese Journal of Applied Physics, 49 (6), .
(doi:10.1143/JJAP.49.06GE07).
Abstract
This study shows that poly(methyl methacrylate) (PMMA) 950 thick photoresist is a promising polymer for ion-track nanolithography templates for nanomaterials fabrication resulting in high aspect ratio nanostructures ranging from 100 to 500 with highly selective etch rates when using deep ultraviolet (DUV) cross linking polymerisation prior to the ion-track irradiation. DUV exposure times and post exposure hardbake conditions are crucial factors for achieving high aspect ratio structures. Exposure doses of 6600 mJ/cm2 with post exposure hardbake at 180 °C for 90 s gave promising preliminary results for high aspect ratio nanotemplates using thick layer of PMMA 950 photoresist.
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Published date: 2010
Identifiers
Local EPrints ID: 158793
URI: http://eprints.soton.ac.uk/id/eprint/158793
ISSN: 0021-4922
PURE UUID: 27e52bc5-535e-4d3e-b306-df2431045137
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Date deposited: 23 Jun 2010 11:52
Last modified: 29 Apr 2021 01:34
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Contributors
Author:
Elena Koukharenko
Author:
Jekaterina Kuleshova
Author:
Marcel Fowler
Author:
Stephen L. Kok
Author:
Michael J. Tudor
Author:
Stephen P. Beeby
Author:
Neil M. White
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