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Supercritical chemical fluid deposition of InP and InAs

Supercritical chemical fluid deposition of InP and InAs
Supercritical chemical fluid deposition of InP and InAs
Supercritical chemical fluid deposition (SCFD) from [nBu2In(?-EtBu2)2InnBu2] precursors (E = P or As) dissolved in a homogeneous hexane/CO2 fluid results in the growth of a thin film of InP or InAs with a thick mat of nanowires attached to the surface. InP films were well-adhered to the substrate and the nanowires can be removed without disrupting the film; however, the InAs films were poorly adhered, being dislodged simply by tapping the substrate. In many cases, the InP nanowires are single crystalline, and both the nanowires and the underlying films exhibit band-edge luminescence. Use of supercritical CHF3 as the delivery solvent also leads to good quality InP films and reduced carbon incorporation into the films. The single-source precursor system was responsible for significant amounts of carbon. This work shows that the SCFD method may be generally applicable to the growth of compound semiconductors, with important implications for growth of these materials in confined environments.
0897-4756
4246-4253
Aksomaityte, Gabriele
ae55a05a-b280-4324-af07-c4fa8ce7ac39
Cheng, Fei
a0339c70-2a78-4078-8845-62759ac926d3
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Hyde, Jason R.
239d9b15-31f2-4506-9b5c-2990ba17e734
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Smith, David C.
d9b2c02d-b7ea-498b-9ea1-208a1681536f
Wilson, James W.
9c8605f6-489d-48f0-b955-0edd097adc8b
Zhang, Wenjian
1f80ac5e-d4c2-4720-b19e-be700cd411e7
Aksomaityte, Gabriele
ae55a05a-b280-4324-af07-c4fa8ce7ac39
Cheng, Fei
a0339c70-2a78-4078-8845-62759ac926d3
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Hyde, Jason R.
239d9b15-31f2-4506-9b5c-2990ba17e734
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Smith, David C.
d9b2c02d-b7ea-498b-9ea1-208a1681536f
Wilson, James W.
9c8605f6-489d-48f0-b955-0edd097adc8b
Zhang, Wenjian
1f80ac5e-d4c2-4720-b19e-be700cd411e7

Aksomaityte, Gabriele, Cheng, Fei, Hector, Andrew L., Hyde, Jason R., Levason, William, Reid, Gillian, Smith, David C., Wilson, James W. and Zhang, Wenjian (2010) Supercritical chemical fluid deposition of InP and InAs. Chemistry of Materials, 22 (14), 4246-4253. (doi:10.1021/cm1008812).

Record type: Article

Abstract

Supercritical chemical fluid deposition (SCFD) from [nBu2In(?-EtBu2)2InnBu2] precursors (E = P or As) dissolved in a homogeneous hexane/CO2 fluid results in the growth of a thin film of InP or InAs with a thick mat of nanowires attached to the surface. InP films were well-adhered to the substrate and the nanowires can be removed without disrupting the film; however, the InAs films were poorly adhered, being dislodged simply by tapping the substrate. In many cases, the InP nanowires are single crystalline, and both the nanowires and the underlying films exhibit band-edge luminescence. Use of supercritical CHF3 as the delivery solvent also leads to good quality InP films and reduced carbon incorporation into the films. The single-source precursor system was responsible for significant amounts of carbon. This work shows that the SCFD method may be generally applicable to the growth of compound semiconductors, with important implications for growth of these materials in confined environments.

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More information

Published date: 28 June 2010
Organisations: Chemistry, Quantum, Light & Matter Group

Identifiers

Local EPrints ID: 161033
URI: http://eprints.soton.ac.uk/id/eprint/161033
ISSN: 0897-4756
PURE UUID: 7f1ca588-aa1e-4f02-aee0-9fa329612363
ORCID for Andrew L. Hector: ORCID iD orcid.org/0000-0002-9964-2163
ORCID for William Levason: ORCID iD orcid.org/0000-0003-3540-0971
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468

Catalogue record

Date deposited: 22 Jul 2010 13:10
Last modified: 14 Mar 2024 02:39

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Contributors

Author: Gabriele Aksomaityte
Author: Fei Cheng
Author: Jason R. Hyde
Author: William Levason ORCID iD
Author: Gillian Reid ORCID iD
Author: David C. Smith
Author: James W. Wilson
Author: Wenjian Zhang

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