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Development and optimisation of supercritical fluid deposition of semiconductor films

Development and optimisation of supercritical fluid deposition of semiconductor films
Development and optimisation of supercritical fluid deposition of semiconductor films
This thesis is concerned with the deposition, and characterisation, of semiconductor thin films and microstructures deposited from a supercritical fluid. Thin films of CdS, GaP, InP, InAs, and Ge were deposited using supercritical CO2 and CO2-solvent mixtures. Ge was deposited into macropores etched into crystalline silicon substrates. A variety of reactors were designed in order to achieve the successful deposition of the materials. The surface morphology and crystallinity of the films were characterised by scanning electron microscopy and X-ray diffraction. The chemical composition of the films was analysed by energy or wavelength dispersive X-ray spectroscopy, secondary ion mass spectroscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy. The optoelectronic quality of the CdS and InP films was analysed by photoluminescence spectroscopy and mapping. The CdS films deposited were confirmed to be of hexagonal phase by X-ray diffraction and exhibited band edge luminescence. The InP and InAs films were determined to be of cubic structure and the InP films were found to exhibit weak band edge luminescence. The fabrication of macroporous silicon templates by photoelectrochemical etching is also discussed. Pores with diameters of between 60 nm and 2 µm were fabricated, having aspect ratios of up to 100:1. Ge was successfully deposited into macropores etched into these crystalline silicon templates with near conformal coverage.
Wilson, James W.
9c8605f6-489d-48f0-b955-0edd097adc8b
Wilson, James W.
9c8605f6-489d-48f0-b955-0edd097adc8b
Smith, David
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Wilson, James W. (2010) Development and optimisation of supercritical fluid deposition of semiconductor films. University of Southampton, School of Physics and Astronomy, Doctoral Thesis, 237pp.

Record type: Thesis (Doctoral)

Abstract

This thesis is concerned with the deposition, and characterisation, of semiconductor thin films and microstructures deposited from a supercritical fluid. Thin films of CdS, GaP, InP, InAs, and Ge were deposited using supercritical CO2 and CO2-solvent mixtures. Ge was deposited into macropores etched into crystalline silicon substrates. A variety of reactors were designed in order to achieve the successful deposition of the materials. The surface morphology and crystallinity of the films were characterised by scanning electron microscopy and X-ray diffraction. The chemical composition of the films was analysed by energy or wavelength dispersive X-ray spectroscopy, secondary ion mass spectroscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy. The optoelectronic quality of the CdS and InP films was analysed by photoluminescence spectroscopy and mapping. The CdS films deposited were confirmed to be of hexagonal phase by X-ray diffraction and exhibited band edge luminescence. The InP and InAs films were determined to be of cubic structure and the InP films were found to exhibit weak band edge luminescence. The fabrication of macroporous silicon templates by photoelectrochemical etching is also discussed. Pores with diameters of between 60 nm and 2 µm were fabricated, having aspect ratios of up to 100:1. Ge was successfully deposited into macropores etched into these crystalline silicon templates with near conformal coverage.

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Deposition_and_Optimisation_of_Supercritical_Fluid_Deposition_of_Semiconductor_Films.pdf - Other
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Published date: 26 September 2010
Organisations: University of Southampton

Identifiers

Local EPrints ID: 167623
URI: http://eprints.soton.ac.uk/id/eprint/167623
PURE UUID: 4c570663-c72a-41df-b782-70707fb2e2fd

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Date deposited: 10 Dec 2010 15:40
Last modified: 10 Dec 2021 18:37

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Contributors

Author: James W. Wilson
Thesis advisor: David Smith

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