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Electron lifetime measurement in stepped quantum wells for far infrared lasers

Electron lifetime measurement in stepped quantum wells for far infrared lasers
Electron lifetime measurement in stepped quantum wells for far infrared lasers
A theoretical study shows that electron population inversion can be realised by optically pumping an asymmetric quantum well (QW) by elegantly designing the subbands. In our previous work, we proposed a three-level system using multiple stepped QWs and a four-level system using multiple coupling QWs to work in the range 40 - 300µm as an analogue of a far infrared (FIR) gas laser and a Nd3+:YAG laser systems. Research has shown that the gain could be significantly reduced due to hot electron phonon emission and inhomogeneous broadening induced during the QW growth.
Xin, Z.J.
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Rutt, H.N.
e09fa327-0c01-467a-9898-4e7f0cd715fc
Tan, H.A.
26280f50-8d13-4303-9cb9-e512586b8622
Wells, J.
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Bradley, I.
c436a176-7f79-42d9-943a-0ece48239541
Xin, Z.J.
bc46917f-364a-498b-ad97-4241cabdeee4
Rutt, H.N.
e09fa327-0c01-467a-9898-4e7f0cd715fc
Tan, H.A.
26280f50-8d13-4303-9cb9-e512586b8622
Wells, J.
84f9e105-fa6e-4796-9c96-c8126fbb9a33
Bradley, I.
c436a176-7f79-42d9-943a-0ece48239541

Xin, Z.J., Rutt, H.N., Tan, H.A., Wells, J. and Bradley, I. (2000) Electron lifetime measurement in stepped quantum wells for far infrared lasers. 25th Semiconductor and Integrated Optoelectronics (SIOE '2000), Cardiff, United Kingdom. 16 - 18 Apr 2000.

Record type: Conference or Workshop Item (Paper)

Abstract

A theoretical study shows that electron population inversion can be realised by optically pumping an asymmetric quantum well (QW) by elegantly designing the subbands. In our previous work, we proposed a three-level system using multiple stepped QWs and a four-level system using multiple coupling QWs to work in the range 40 - 300µm as an analogue of a far infrared (FIR) gas laser and a Nd3+:YAG laser systems. Research has shown that the gain could be significantly reduced due to hot electron phonon emission and inhomogeneous broadening induced during the QW growth.

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Published date: 2000
Venue - Dates: 25th Semiconductor and Integrated Optoelectronics (SIOE '2000), Cardiff, United Kingdom, 2000-04-16 - 2000-04-18

Identifiers

Local EPrints ID: 16957
URI: http://eprints.soton.ac.uk/id/eprint/16957
PURE UUID: 7816eb70-57a7-4c5a-a952-532ab4c202e4

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Date deposited: 22 Aug 2005
Last modified: 22 Jul 2020 16:32

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