Xin, Z.J., Rutt, H.N., Tan, H.A., Wells, J. and Bradley, I.
Electron lifetime measurement in stepped quantum wells for far infrared lasers
At 25th Semiconductor and Integrated Optoelectronics (SIOE '2000), United Kingdom.
17 - 19 Apr 2000.
A theoretical study shows that electron population inversion can be realised by optically pumping an asymmetric quantum well (QW) by elegantly designing the subbands. In our previous work, we proposed a three-level system using multiple stepped QWs and a four-level system using multiple coupling QWs to work in the range 40 - 300µm as an analogue of a far infrared (FIR) gas laser and a Nd3+:YAG laser systems. Research has shown that the gain could be significantly reduced due to hot electron phonon emission and inhomogeneous broadening induced during the QW growth.
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