Electron lifetime measurement in stepped quantum wells for far infrared lasers


Xin, Z.J., Rutt, H.N., Tan, H.A., Wells, J. and Bradley, I. (2000) Electron lifetime measurement in stepped quantum wells for far infrared lasers At 25th Semiconductor and Integrated Optoelectronics (SIOE '2000), United Kingdom. 17 - 19 Apr 2000.

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Description/Abstract

A theoretical study shows that electron population inversion can be realised by optically pumping an asymmetric quantum well (QW) by elegantly designing the subbands. In our previous work, we proposed a three-level system using multiple stepped QWs and a four-level system using multiple coupling QWs to work in the range 40 - 300µm as an analogue of a far infrared (FIR) gas laser and a Nd3+:YAG laser systems. Research has shown that the gain could be significantly reduced due to hot electron phonon emission and inhomogeneous broadening induced during the QW growth.

Item Type: Conference or Workshop Item (Paper)
Venue - Dates: 25th Semiconductor and Integrated Optoelectronics (SIOE '2000), United Kingdom, 2000-04-17 - 2000-04-19
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ePrint ID: 16957
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Date Event
2000Published
Date Deposited: 22 Aug 2005
Last Modified: 16 Apr 2017 23:22
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/16957

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