Passively mode-locked diode-pumped surface-emitting semiconductor laser
Passively mode-locked diode-pumped surface-emitting semiconductor laser
For the first time we passively mode-locked a vertical-external-cavity surface-emitting laser using a semiconductor saturable absorber mirror. We achieved 5-ps pulses with 15.3 mW average power or 12-ps pulses with 40 mW.
Häring, R.
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Paschotta, R.
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Morier-Genoud, F.
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Keller, U.
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Garnache, A.
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Oesterle, U.
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Roberts, J.S.
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Hoogland, S.
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Dhanjal, S.
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Tropper, A.C.
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2000
Häring, R.
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Paschotta, R.
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Morier-Genoud, F.
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Keller, U.
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Garnache, A.
401e722a-e0e9-4e7b-8150-a6b41371ebe4
Oesterle, U.
f713e10a-f0e9-443b-84b4-e27ce344e4fe
Roberts, J.S.
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Hoogland, S.
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Dhanjal, S.
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Tropper, A.C.
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Häring, R., Paschotta, R., Morier-Genoud, F., Keller, U., Garnache, A., Oesterle, U., Roberts, J.S., Hoogland, S., Dhanjal, S. and Tropper, A.C.
(2000)
Passively mode-locked diode-pumped surface-emitting semiconductor laser.
CLEO 2000, Nice, France, San Francisco, United States.
07 - 12 May 2000.
Record type:
Conference or Workshop Item
(Paper)
Abstract
For the first time we passively mode-locked a vertical-external-cavity surface-emitting laser using a semiconductor saturable absorber mirror. We achieved 5-ps pulses with 15.3 mW average power or 12-ps pulses with 40 mW.
More information
Published date: 2000
Additional Information:
CMS1
Venue - Dates:
CLEO 2000, Nice, France, San Francisco, United States, 2000-05-07 - 2000-05-12
Identifiers
Local EPrints ID: 16980
URI: http://eprints.soton.ac.uk/id/eprint/16980
PURE UUID: b5921305-e02c-49fb-8d17-62a3dde3ffda
Catalogue record
Date deposited: 23 Aug 2005
Last modified: 15 Mar 2024 05:50
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Contributors
Author:
R. Häring
Author:
R. Paschotta
Author:
F. Morier-Genoud
Author:
U. Keller
Author:
A. Garnache
Author:
U. Oesterle
Author:
J.S. Roberts
Author:
S. Hoogland
Author:
S. Dhanjal
Author:
A.C. Tropper
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