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Passively mode-locked diode-pumped surface-emitting semiconductor laser

Passively mode-locked diode-pumped surface-emitting semiconductor laser
Passively mode-locked diode-pumped surface-emitting semiconductor laser
For the first time we passively mode-locked a vertical-external-cavity surface-emitting laser using a semiconductor saturable absorber mirror. We achieved 5-ps pulses with 15.3 mW average power or 12-ps pulses with 40 mW.
Häring, R.
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Paschotta, R.
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Morier-Genoud, F.
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Keller, U.
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Garnache, A.
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Oesterle, U.
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Roberts, J.S.
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Hoogland, S.
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Dhanjal, S.
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Tropper, A.C.
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Häring, R.
6251f72c-3183-4917-a6bb-7f2323d76195
Paschotta, R.
d9e3d753-48c1-405f-b31e-e662f23a70a4
Morier-Genoud, F.
278a30bf-4939-47ed-b523-26e3f017cd4e
Keller, U.
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Garnache, A.
401e722a-e0e9-4e7b-8150-a6b41371ebe4
Oesterle, U.
f713e10a-f0e9-443b-84b4-e27ce344e4fe
Roberts, J.S.
c4eae59e-8356-4436-b317-670038103d16
Hoogland, S.
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Dhanjal, S.
a3f4fa8d-654f-4162-bd38-67c9b2d2f136
Tropper, A.C.
f3505426-e0d5-4e91-aed3-aecdb44b393c

Häring, R., Paschotta, R., Morier-Genoud, F., Keller, U., Garnache, A., Oesterle, U., Roberts, J.S., Hoogland, S., Dhanjal, S. and Tropper, A.C. (2000) Passively mode-locked diode-pumped surface-emitting semiconductor laser. CLEO 2000, San Francisco, United States. 07 - 12 May 2000.

Record type: Conference or Workshop Item (Paper)

Abstract

For the first time we passively mode-locked a vertical-external-cavity surface-emitting laser using a semiconductor saturable absorber mirror. We achieved 5-ps pulses with 15.3 mW average power or 12-ps pulses with 40 mW.

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More information

Published date: 2000
Additional Information: CMS1
Venue - Dates: CLEO 2000, San Francisco, United States, 2000-05-07 - 2000-05-12

Identifiers

Local EPrints ID: 16980
URI: https://eprints.soton.ac.uk/id/eprint/16980
PURE UUID: b5921305-e02c-49fb-8d17-62a3dde3ffda

Catalogue record

Date deposited: 23 Aug 2005
Last modified: 24 Sep 2019 16:30

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