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Microstructuring in LiNbO3: a route to MEMS devices in piezoelectric crystal media

Microstructuring in LiNbO3: a route to MEMS devices in piezoelectric crystal media
Microstructuring in LiNbO3: a route to MEMS devices in piezoelectric crystal media
Ferroelectric materials such as LiNbO3 and LiTaO3 offer many potential advantages over silicon for MEMS structures and self-actuating miniature devices. These materials possess numerous useful intrinsic properties such as piezoelectricity, pyroelectric and electro-optic coefficients, enabling the construction of micron-scale cantilevers, membranes, tips and switches. So far however, reliable and accurate methods for machining and microstructuring LiNbO3 single crystals have been lacking. We have recently been exploring several such methods, which are sensitive to ferroelectric domain orientation. A sample that has been domain-engineered shows a large difference in etch characteristics: the +z face does not etch at all, whereas the -z face etches normally. Microstructured devices can be fabricated therefore, via spatially selective domain poling followed by etching. The extreme sensitivity of the etch process to domain orientation has enabled us to fabricate ridge waveguides for electro-optic modulator applications, alignment grooves for efficient fibre-pigtailing to LiNbO3 modulators, and micro-cantilevers using a novel technique of contact bonding of dissimilar ferroelectric hosts.
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Barry, I.E.
d4c9ca54-8091-495f-81b3-a73c4fea734d
Ross, G.W.
e881119e-2126-442e-a24d-506dac48a4a4
Smith, Peter G.R.
8979668a-8b7a-4838-9a74-1a7cfc6665f6
Gawith, C.B.E.
926665c0-84c7-4a1d-ae19-ee6d7d14c43e
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Barry, I.E.
d4c9ca54-8091-495f-81b3-a73c4fea734d
Ross, G.W.
e881119e-2126-442e-a24d-506dac48a4a4
Smith, Peter G.R.
8979668a-8b7a-4838-9a74-1a7cfc6665f6
Gawith, C.B.E.
926665c0-84c7-4a1d-ae19-ee6d7d14c43e

Eason, R.W., Barry, I.E., Ross, G.W., Smith, Peter G.R. and Gawith, C.B.E. (2000) Microstructuring in LiNbO3: a route to MEMS devices in piezoelectric crystal media. ISAP 2000 / Micro-Opto-Electro-Mechanical Systems. 22 - 24 May 2000.

Record type: Conference or Workshop Item (Paper)

Abstract

Ferroelectric materials such as LiNbO3 and LiTaO3 offer many potential advantages over silicon for MEMS structures and self-actuating miniature devices. These materials possess numerous useful intrinsic properties such as piezoelectricity, pyroelectric and electro-optic coefficients, enabling the construction of micron-scale cantilevers, membranes, tips and switches. So far however, reliable and accurate methods for machining and microstructuring LiNbO3 single crystals have been lacking. We have recently been exploring several such methods, which are sensitive to ferroelectric domain orientation. A sample that has been domain-engineered shows a large difference in etch characteristics: the +z face does not etch at all, whereas the -z face etches normally. Microstructured devices can be fabricated therefore, via spatially selective domain poling followed by etching. The extreme sensitivity of the etch process to domain orientation has enabled us to fabricate ridge waveguides for electro-optic modulator applications, alignment grooves for efficient fibre-pigtailing to LiNbO3 modulators, and micro-cantilevers using a novel technique of contact bonding of dissimilar ferroelectric hosts.

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Published date: 2000
Venue - Dates: ISAP 2000 / Micro-Opto-Electro-Mechanical Systems, 2000-05-22 - 2000-05-24

Identifiers

Local EPrints ID: 16983
URI: https://eprints.soton.ac.uk/id/eprint/16983
PURE UUID: 1c7a3d0d-2e29-4e8c-aa77-4d144f63c6c3
ORCID for R.W. Eason: ORCID iD orcid.org/0000-0001-9704-2204
ORCID for C.B.E. Gawith: ORCID iD orcid.org/0000-0002-3502-3558

Catalogue record

Date deposited: 23 Aug 2005
Last modified: 06 Jun 2018 13:13

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