Direct laser written channel and spin-coated thin film waveguides in an amorphous chalcogenide (Ga:La:S)
Direct laser written channel and spin-coated thin film waveguides in an amorphous chalcogenide (Ga:La:S)
Chalcogenide glasses are emerging as interesting and useful materials for planar technologies. Recently, we have laser (λ=244 nm) written uniform channel structures into neodymium-doped gallium lanthanum sulphide glass. A typical channel waveguide, with refractive index change Δn ≈ +10-3, has attenuation < 0.5 dB/cm and is spatially single-mode at 1µm with measured fluorescence decay of 73µs for the 4F3/2 lifetime at 1075nm. In addition, high quality thin films of this undoped glass were successfully spin-coated onto an expansion coefficient matched substrate. The interface quality between the substrate and guiding layer was observed to be excellent with uniformity in the spun layer and no observed crystallisation.
Mairaj, A.K.
69f81e26-b09f-4c34-83ee-4388f94fa147
Curry, R.J.
1ae2a4da-7efe-4333-a34e-0ec20ae95154
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
2002
Mairaj, A.K.
69f81e26-b09f-4c34-83ee-4388f94fa147
Curry, R.J.
1ae2a4da-7efe-4333-a34e-0ec20ae95154
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Mairaj, A.K., Curry, R.J. and Hewak, D.W.
(2002)
Direct laser written channel and spin-coated thin film waveguides in an amorphous chalcogenide (Ga:La:S).
Photonics Conference 2002, Korea.
30 Oct - 01 Nov 2002.
Record type:
Conference or Workshop Item
(Paper)
Abstract
Chalcogenide glasses are emerging as interesting and useful materials for planar technologies. Recently, we have laser (λ=244 nm) written uniform channel structures into neodymium-doped gallium lanthanum sulphide glass. A typical channel waveguide, with refractive index change Δn ≈ +10-3, has attenuation < 0.5 dB/cm and is spatially single-mode at 1µm with measured fluorescence decay of 73µs for the 4F3/2 lifetime at 1075nm. In addition, high quality thin films of this undoped glass were successfully spin-coated onto an expansion coefficient matched substrate. The interface quality between the substrate and guiding layer was observed to be excellent with uniformity in the spun layer and no observed crystallisation.
More information
Published date: 2002
Additional Information:
T2E6
Venue - Dates:
Photonics Conference 2002, Korea, 2002-10-30 - 2002-11-01
Identifiers
Local EPrints ID: 17012
URI: http://eprints.soton.ac.uk/id/eprint/17012
PURE UUID: 4ef9ee0f-28c9-4179-90bd-0b8cc0bf5245
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Date deposited: 18 Aug 2005
Last modified: 15 Mar 2024 05:51
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Contributors
Author:
A.K. Mairaj
Author:
R.J. Curry
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