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Photorefractivity and luminescence properties of Sn-doped SiO2 glasses

Photorefractivity and luminescence properties of Sn-doped SiO2 glasses
Photorefractivity and luminescence properties of Sn-doped SiO2 glasses
Tin-doped silica glass has been recently investigated as photosensitive optical material for optoelectronic device applications. The mechanisms responsible for the material photosensitivity and the optical activity induced by Sn doping are presented. Studies performed on perform slides and on sol-gel bulk samples show that the refractive index change can be ascribed to structural rearrangements induced by photochemical reactions. Photoluminescence measurements indicate that tin atoms are embedded in Sn-substituted Si sites of the silica network. The modified structure shows extremely high stability, and gratings written in fibers exhibit a negligible erasure in 30 minutes below 600°C. At high UV radiation fluences the refractive index modulation saturates and does not exhibit any decrease. Optical measurements and electron paramagnetic resonance data show that different processes contribute to the refractive index change. The comparison between samples with and without optical absorption at the W laser wavelength shows that the presence and the consequent laser-induced bleaching of the 5 eV absorption band due to oxygen deficient centres does not appear crucial for photosensitivity. In fact a refractive index change is also observed in samples without detectable absorption at this energy.
Paleari, A.
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Brambilla, G.
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Chiodini, N.
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Ghidini, S.
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Di Martino, D.
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Paleari, A.
8f5681e9-6393-4a6a-b346-3905b72e9dbd
Brambilla, G.
815d9712-62c7-47d1-8860-9451a363a6c8
Chiodini, N.
d516f93d-7d8e-4033-b1be-b33ad58bf4f6
Ghidini, S.
f2b840b8-0476-4345-905b-51810f979fa9
Di Martino, D.
d918a7ed-1d6d-4fe3-b30e-917d14916ac0

Paleari, A., Brambilla, G., Chiodini, N., Ghidini, S. and Di Martino, D. (2002) Photorefractivity and luminescence properties of Sn-doped SiO2 glasses. Photonics West, San Jose, California, USA. 19 - 25 Jan 2002.

Record type: Conference or Workshop Item (Paper)

Abstract

Tin-doped silica glass has been recently investigated as photosensitive optical material for optoelectronic device applications. The mechanisms responsible for the material photosensitivity and the optical activity induced by Sn doping are presented. Studies performed on perform slides and on sol-gel bulk samples show that the refractive index change can be ascribed to structural rearrangements induced by photochemical reactions. Photoluminescence measurements indicate that tin atoms are embedded in Sn-substituted Si sites of the silica network. The modified structure shows extremely high stability, and gratings written in fibers exhibit a negligible erasure in 30 minutes below 600°C. At high UV radiation fluences the refractive index modulation saturates and does not exhibit any decrease. Optical measurements and electron paramagnetic resonance data show that different processes contribute to the refractive index change. The comparison between samples with and without optical absorption at the W laser wavelength shows that the presence and the consequent laser-induced bleaching of the 5 eV absorption band due to oxygen deficient centres does not appear crucial for photosensitivity. In fact a refractive index change is also observed in samples without detectable absorption at this energy.

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More information

e-pub ahead of print date: 2002
Additional Information: 4640-26
Venue - Dates: Photonics West, San Jose, California, USA, 2002-01-19 - 2002-01-25

Identifiers

Local EPrints ID: 17074
URI: http://eprints.soton.ac.uk/id/eprint/17074
PURE UUID: 68fffe3a-14bd-4c7e-a60c-1f325ca9ee35
ORCID for G. Brambilla: ORCID iD orcid.org/0000-0002-5730-0499

Catalogue record

Date deposited: 13 Sep 2005
Last modified: 02 Apr 2022 01:37

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Contributors

Author: A. Paleari
Author: G. Brambilla ORCID iD
Author: N. Chiodini
Author: S. Ghidini
Author: D. Di Martino

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