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Energy transfer between localized and delocalized states rare-earth doped chalcogenide glasses

Energy transfer between localized and delocalized states rare-earth doped chalcogenide glasses
Energy transfer between localized and delocalized states rare-earth doped chalcogenide glasses
Chalcogenide glasses are interesting materials due to their high nonlinearity, low phonon energies and consequent low non-radiative decay rate of rare-earth (RE) excited states and wide optical transparency window. These properties make them promising photonic materials for mid infrared applications. They can be classified as semiconductors with energy gap typically ~2eV, much narrower than insulating host materials (for YAG, Egap ~6eV). Therefore, the RE doped 4f-shell transitions overlap with the optical transition of the host glass. The energy transfer process from the host glass to the RE ion (a delocalized to localized state transition) is attributed by intrinsic defects states in the glass. In this work, we performed conventional spectroscopic (absorption, luminescence and excitation, at 5K and 300K) and Thermal Lens (TL) measurements in Nd3+ doped gallium lanthanum sulfide (GLS) glasses. The TL measurements were performed with excitation energy bellow the band gap energy (2.6eV, lambda ~500nm) and at the weak absorption tail (WAT). From WAT measurements (lambda = 502, 514 and 528nm) we obtained ~40% for the probability of energy transfer from host to the ion. Pumping in resonance with the near infrared Nd3+ lines (lambda = 814 and 891nm) we obtained the Nd3+ ion fluorescence quantum efficiency ~100%. However, at lambda ~596nm we observed a very asymmetric TL lineshape indicating energy transfer from the ion to the host for lambda < 590nm (the high energy side of the line).
De Camargo, A.S.
53301c01-e610-4491-8cbb-47088e147df9
Lima, S.M.
812be72f-4727-4840-a24e-9290494b2312
Catunda, T.
e7766980-832d-4681-a215-95def8fe3e00
Nunes, L.A.de Oliveira
6edba704-48dd-4b8a-8a19-dcfee971191b
Hewak, D.
87c80070-c101-4f7a-914f-4cc3131e3db0
De Camargo, A.S.
53301c01-e610-4491-8cbb-47088e147df9
Lima, S.M.
812be72f-4727-4840-a24e-9290494b2312
Catunda, T.
e7766980-832d-4681-a215-95def8fe3e00
Nunes, L.A.de Oliveira
6edba704-48dd-4b8a-8a19-dcfee971191b
Hewak, D.
87c80070-c101-4f7a-914f-4cc3131e3db0

De Camargo, A.S., Lima, S.M., Catunda, T., Nunes, L.A.de Oliveira and Hewak, D. (2001) Energy transfer between localized and delocalized states rare-earth doped chalcogenide glasses. XXIV Encontro Nacional de Fisica da Material Condensada, Sao Lourenco, Brazil. 14 - 18 May 2001.

Record type: Conference or Workshop Item (Paper)

Abstract

Chalcogenide glasses are interesting materials due to their high nonlinearity, low phonon energies and consequent low non-radiative decay rate of rare-earth (RE) excited states and wide optical transparency window. These properties make them promising photonic materials for mid infrared applications. They can be classified as semiconductors with energy gap typically ~2eV, much narrower than insulating host materials (for YAG, Egap ~6eV). Therefore, the RE doped 4f-shell transitions overlap with the optical transition of the host glass. The energy transfer process from the host glass to the RE ion (a delocalized to localized state transition) is attributed by intrinsic defects states in the glass. In this work, we performed conventional spectroscopic (absorption, luminescence and excitation, at 5K and 300K) and Thermal Lens (TL) measurements in Nd3+ doped gallium lanthanum sulfide (GLS) glasses. The TL measurements were performed with excitation energy bellow the band gap energy (2.6eV, lambda ~500nm) and at the weak absorption tail (WAT). From WAT measurements (lambda = 502, 514 and 528nm) we obtained ~40% for the probability of energy transfer from host to the ion. Pumping in resonance with the near infrared Nd3+ lines (lambda = 814 and 891nm) we obtained the Nd3+ ion fluorescence quantum efficiency ~100%. However, at lambda ~596nm we observed a very asymmetric TL lineshape indicating energy transfer from the ion to the host for lambda < 590nm (the high energy side of the line).

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e-pub ahead of print date: 2001
Venue - Dates: XXIV Encontro Nacional de Fisica da Material Condensada, Sao Lourenco, Brazil, 2001-05-14 - 2001-05-18

Identifiers

Local EPrints ID: 17096
URI: http://eprints.soton.ac.uk/id/eprint/17096
PURE UUID: 30fdec88-e42f-4904-99cd-992ab60ff4e2
ORCID for D. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

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Date deposited: 14 Sep 2005
Last modified: 23 Jul 2020 00:25

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Contributors

Author: A.S. De Camargo
Author: S.M. Lima
Author: T. Catunda
Author: L.A.de Oliveira Nunes
Author: D. Hewak ORCID iD

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