Electro-optically controlled beam deflection and switching in domain-engineered LiNbO3
Electro-optically controlled beam deflection and switching in domain-engineered LiNbO3
We report a novel switching method that occurs due to the electro-optic effect under an applied field when a beam incident on an interface between anti-parallel domains in a sample of LiNbO3 subtends an angle greater than that required for total internal reflection (TIR). As the field increases, the induced index change present across the interface region acts to first deflect the beam towards the interface, then when the conditions are reached for TR, to switch the beam with a contrast ratio that should be extremely high, due to the intrinsic nature of the TIR process.
We show results for wavelengths in the visible and at 1.5µm, where we obtain contrast ratios >20dB, deflection angles of 8° per kV applied, and an effective insensitivity to wavelength when compared to other devices such as Pockels cells. Experimental data is compared to a 2-d theoretical model for an incident Gaussian beam focussed-at the interface, and good agreement is shown.
Eason, R.W.
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Boyland, A.J.
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Mailis, Sakellaris
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Hendricks, J.M.
0dc8ec2a-4a6e-415a-bb7d-417917f4f130
Smith, Peter G.R.
8979668a-8b7a-4838-9a74-1a7cfc6665f6
2001
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Boyland, A.J.
7f024ca8-d41f-4aa2-9536-9baa0b8c892e
Mailis, Sakellaris
233e0768-3f8d-430e-8fdf-92e6f4f6a0c4
Hendricks, J.M.
0dc8ec2a-4a6e-415a-bb7d-417917f4f130
Smith, Peter G.R.
8979668a-8b7a-4838-9a74-1a7cfc6665f6
Eason, R.W., Boyland, A.J., Mailis, Sakellaris, Hendricks, J.M. and Smith, Peter G.R.
(2001)
Electro-optically controlled beam deflection and switching in domain-engineered LiNbO3.
IOP-MOEMS, London, United Kingdom.
31 Oct 2001.
Record type:
Conference or Workshop Item
(Paper)
Abstract
We report a novel switching method that occurs due to the electro-optic effect under an applied field when a beam incident on an interface between anti-parallel domains in a sample of LiNbO3 subtends an angle greater than that required for total internal reflection (TIR). As the field increases, the induced index change present across the interface region acts to first deflect the beam towards the interface, then when the conditions are reached for TR, to switch the beam with a contrast ratio that should be extremely high, due to the intrinsic nature of the TIR process.
We show results for wavelengths in the visible and at 1.5µm, where we obtain contrast ratios >20dB, deflection angles of 8° per kV applied, and an effective insensitivity to wavelength when compared to other devices such as Pockels cells. Experimental data is compared to a 2-d theoretical model for an incident Gaussian beam focussed-at the interface, and good agreement is shown.
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Published date: 2001
Venue - Dates:
IOP-MOEMS, London, United Kingdom, 2001-10-31 - 2001-10-31
Identifiers
Local EPrints ID: 17144
URI: http://eprints.soton.ac.uk/id/eprint/17144
PURE UUID: 02af9995-c6d3-4f78-ac0b-26d764795759
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Date deposited: 15 Sep 2005
Last modified: 16 Mar 2024 02:49
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Contributors
Author:
A.J. Boyland
Author:
Sakellaris Mailis
Author:
J.M. Hendricks
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