Beyond the Yablonovitch limit: trapping light by frequency shift
Beyond the Yablonovitch limit: trapping light by frequency shift
It is shown that randomising the photon distribution over the frequency as well as orientation variables dramatically improves the efficiency of optical confinement in a weakly absorbing material such as crystalline silicon. The enhancement in average optical path length over the Yablonovitch limit [E. Yablonovitch, J. Opt. Soc. Am. 72, 899 (1982)] is given by an inverse Boltzmann factor of the frequency shift, making it possible to manufacture, for example, efficient crystalline silicon solar cells of thickness barely 1 micrometer
071107-071108
Markvart, Tom
f21e82ec-4e3b-4485-9f27-ffc0102fdf1c
February 2011
Markvart, Tom
f21e82ec-4e3b-4485-9f27-ffc0102fdf1c
Markvart, Tom
(2011)
Beyond the Yablonovitch limit: trapping light by frequency shift.
Applied Physics Letters, 98 (7), .
(doi:10.1063/1.3554436).
Abstract
It is shown that randomising the photon distribution over the frequency as well as orientation variables dramatically improves the efficiency of optical confinement in a weakly absorbing material such as crystalline silicon. The enhancement in average optical path length over the Yablonovitch limit [E. Yablonovitch, J. Opt. Soc. Am. 72, 899 (1982)] is given by an inverse Boltzmann factor of the frequency shift, making it possible to manufacture, for example, efficient crystalline silicon solar cells of thickness barely 1 micrometer
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Published date: February 2011
Organisations:
Engineering Mats & Surface Engineerg Gp
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Local EPrints ID: 176569
URI: http://eprints.soton.ac.uk/id/eprint/176569
ISSN: 0003-6951
PURE UUID: 823c5439-f8e9-47bc-a4ef-65eb1a122594
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Date deposited: 09 Mar 2011 15:15
Last modified: 14 Mar 2024 02:40
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