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Beyond the Yablonovitch limit: trapping light by frequency shift

Beyond the Yablonovitch limit: trapping light by frequency shift
Beyond the Yablonovitch limit: trapping light by frequency shift
It is shown that randomising the photon distribution over the frequency as well as orientation variables dramatically improves the efficiency of optical confinement in a weakly absorbing material such as crystalline silicon. The enhancement in average optical path length over the Yablonovitch limit [E. Yablonovitch, J. Opt. Soc. Am. 72, 899 (1982)] is given by an inverse Boltzmann factor of the frequency shift, making it possible to manufacture, for example, efficient crystalline silicon solar cells of thickness barely 1 micrometer
0003-6951
071107-071108
Markvart, Tom
f21e82ec-4e3b-4485-9f27-ffc0102fdf1c
Markvart, Tom
f21e82ec-4e3b-4485-9f27-ffc0102fdf1c

Markvart, Tom (2011) Beyond the Yablonovitch limit: trapping light by frequency shift. Applied Physics Letters, 98 (7), 071107-071108. (doi:10.1063/1.3554436).

Record type: Article

Abstract

It is shown that randomising the photon distribution over the frequency as well as orientation variables dramatically improves the efficiency of optical confinement in a weakly absorbing material such as crystalline silicon. The enhancement in average optical path length over the Yablonovitch limit [E. Yablonovitch, J. Opt. Soc. Am. 72, 899 (1982)] is given by an inverse Boltzmann factor of the frequency shift, making it possible to manufacture, for example, efficient crystalline silicon solar cells of thickness barely 1 micrometer

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Published date: February 2011
Organisations: Engineering Mats & Surface Engineerg Gp

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Local EPrints ID: 176569
URI: http://eprints.soton.ac.uk/id/eprint/176569
ISSN: 0003-6951
PURE UUID: 823c5439-f8e9-47bc-a4ef-65eb1a122594

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Date deposited: 09 Mar 2011 15:15
Last modified: 14 Mar 2024 02:40

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