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Electrical phase change of CVD-grown Ge-Sb-Te thin film device

Electrical phase change of CVD-grown Ge-Sb-Te thin film device
Electrical phase change of CVD-grown Ge-Sb-Te thin film device
A prototype Ge-Sb-Te thin film phase-change memory device has been fabricated and reversible threshold and phase change switching demonstrated electrically, with a threshold voltage of 1.5 – 1.7 V. The Ge-Sb-Te thin film was fabricated by chemical vapour deposition (CVD) at atmospheric pressure using GeCl4, SbCl5, and Te precursors with reactive gas H2 at reaction temperature 780 °C and substrate temperature 250 °C. The surface morphology and composition of the CVD-grown Ge-Sb-Te thin film has been characterized by scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). The CVD-grown Ge-Sb-Te thin film shows promise for the phase change memory applications.
0013-5194
288-289
Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Ou, Jun-Yu
3fb703e3-b222-46d2-b4ee-75f296d9d64d
Knight, Kenton
7f4a1bf9-9bb2-4cab-b8f8-55696f58884b
Hewak, Daniel
87c80070-c101-4f7a-914f-4cc3131e3db0
Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Gholipour, Behrad
c17bd62d-9df6-40e6-bc42-65272d97e559
Ou, Jun-Yu
3fb703e3-b222-46d2-b4ee-75f296d9d64d
Knight, Kenton
7f4a1bf9-9bb2-4cab-b8f8-55696f58884b
Hewak, Daniel
87c80070-c101-4f7a-914f-4cc3131e3db0

Huang, Chung-Che, Gholipour, Behrad, Ou, Jun-Yu, Knight, Kenton and Hewak, Daniel (2011) Electrical phase change of CVD-grown Ge-Sb-Te thin film device. Electronics Letters, 47 (4), 288-289. (doi:10.1049/el.2010.3276).

Record type: Article

Abstract

A prototype Ge-Sb-Te thin film phase-change memory device has been fabricated and reversible threshold and phase change switching demonstrated electrically, with a threshold voltage of 1.5 – 1.7 V. The Ge-Sb-Te thin film was fabricated by chemical vapour deposition (CVD) at atmospheric pressure using GeCl4, SbCl5, and Te precursors with reactive gas H2 at reaction temperature 780 °C and substrate temperature 250 °C. The surface morphology and composition of the CVD-grown Ge-Sb-Te thin film has been characterized by scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). The CVD-grown Ge-Sb-Te thin film shows promise for the phase change memory applications.

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Published date: 2011
Organisations: Optoelectronics Research Centre
Learn more about Optoelectronics Research Centre research

Identifiers

Local EPrints ID: 177743
URI: http://eprints.soton.ac.uk/id/eprint/177743
DOI: doi:10.1049/el.2010.3276
ISSN: 0013-5194
PURE UUID: 147775d2-07a8-4430-be50-3c7fc1ac77b8
ORCID for Chung-Che Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for Jun-Yu Ou: ORCID iD orcid.org/0000-0001-8028-6130
ORCID for Daniel Hewak: ORCID iD orcid.org/0000-0002-2093-5773

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Date deposited: 22 Mar 2011 15:00
Last modified: 14 Mar 2024 02:57

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Contributors

Author: Chung-Che Huang ORCID iD
Author: Behrad Gholipour
Author: Jun-Yu Ou ORCID iD
Author: Kenton Knight
Author: Daniel Hewak ORCID iD

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