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Electrical phase change of CVD-grown Ge-Sb-Te thin film device

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A prototype Ge-Sb-Te thin film phase-change memory device has been fabricated and reversible threshold and phase change switching demonstrated electrically, with a threshold voltage of 1.5 – 1.7 V. The Ge-Sb-Te thin film was fabricated by chemical vapour deposition (CVD) at atmospheric pressure using GeCl4, SbCl5, and Te precursors with reactive gas H2 at reaction temperature 780 °C and substrate temperature 250 °C. The surface morphology and composition of the CVD-grown Ge-Sb-Te thin film has been characterized by scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). The CVD-grown Ge-Sb-Te thin film shows promise for the phase change memory applications.

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Huang, Chung-Che, Gholipour, Behrad, Ou, Jun-Yu, Knight, Kenton and Hewak, Daniel (2011) Electrical phase change of CVD-grown Ge-Sb-Te thin film device Electronics Letters, 47, (4), pp. 288-289. (doi:10.1049/el.2010.3276).

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Published date: 2011
Organisations: Optoelectronics Research Centre


Local EPrints ID: 177743
ISSN: 0013-5194
PURE UUID: 147775d2-07a8-4430-be50-3c7fc1ac77b8
ORCID for Chung-Che Huang: ORCID iD
ORCID for Jun-Yu Ou: ORCID iD
ORCID for Daniel Hewak: ORCID iD

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Date deposited: 22 Mar 2011 15:00
Last modified: 18 Jul 2017 12:05

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Author: Chung-Che Huang ORCID iD
Author: Jun-Yu Ou ORCID iD
Author: Kenton Knight
Author: Daniel Hewak ORCID iD

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