Erbium doped waveguide laser in tantalum pentoxide
Erbium doped waveguide laser in tantalum pentoxide
Tantalum pentoxide (Ta2O5) is a promising high index material for dense photonic circuits, with the incorporation of gain substantially increasing its potential functionality. Diode-pumped laser action is demonstrated in 2.3-cm-long Ta2O5 rib waveguides doped with 2.7 x 1020 erbium ions/cm3, which were fabricated by magnetron sputtering on an oxidized silicon wafer. Lasing was observed at wavelengths between 1558 and 1562 nm with a launched diode pump power threshold of 14 mW.
1571-1573
Subramanian, A.Z.
051aee73-cf97-4738-8784-fbaff72bd6b9
Oton, C.J.
7e0803bc-34e4-4c6d-8f27-1204ef1775da
Shepherd, D.P.
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Wilkinson, J.S.
73483cf3-d9f2-4688-9b09-1c84257884ca
1 November 2010
Subramanian, A.Z.
051aee73-cf97-4738-8784-fbaff72bd6b9
Oton, C.J.
7e0803bc-34e4-4c6d-8f27-1204ef1775da
Shepherd, D.P.
9fdd51c4-39d6-41b3-9021-4c033c2f4ead
Wilkinson, J.S.
73483cf3-d9f2-4688-9b09-1c84257884ca
Subramanian, A.Z., Oton, C.J., Shepherd, D.P. and Wilkinson, J.S.
(2010)
Erbium doped waveguide laser in tantalum pentoxide.
IEEE Photonics Technology Letters, 22 (21), .
(doi:10.1109/LPT.2010.2072495).
Abstract
Tantalum pentoxide (Ta2O5) is a promising high index material for dense photonic circuits, with the incorporation of gain substantially increasing its potential functionality. Diode-pumped laser action is demonstrated in 2.3-cm-long Ta2O5 rib waveguides doped with 2.7 x 1020 erbium ions/cm3, which were fabricated by magnetron sputtering on an oxidized silicon wafer. Lasing was observed at wavelengths between 1558 and 1562 nm with a launched diode pump power threshold of 14 mW.
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Published date: 1 November 2010
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Local EPrints ID: 178365
URI: http://eprints.soton.ac.uk/id/eprint/178365
ISSN: 1041-1135
PURE UUID: 7e091586-e320-4393-839f-a6badd634ce8
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Date deposited: 24 Mar 2011 15:28
Last modified: 15 Mar 2024 02:40
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Author:
A.Z. Subramanian
Author:
C.J. Oton
Author:
D.P. Shepherd
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