Gain bandwidth characterization of surface-emitting quantum well laser gain structures for femtosecond operation
Gain bandwidth characterization of surface-emitting quantum well laser gain structures for femtosecond operation
We present a method to experimentally characterize the gain filter and calculate a corresponding parabolic gain bandwidth of lasers that are described by “class A” dynamics by solving the master equation of spectral condensation for Gaussian spectra. We experimentally determine the gain filter, with an equivalent parabolic gain bandwidth of up to 51 nm, for broad-band InGaAs/GaAs quantum well gain surface-emitting semiconductor laser structures capable of producing pulses down to 60 fs width when mode-locked with an optical Stark saturable absorber mirror.
21330-21341
Barnes, M.E.
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Mihoubi, Z.
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Wilcox, K.G.
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Quarterman, A.H.
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Farrer, I.
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Ritchie, D.A.
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Garnache, A.
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Hoogland, S.
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Apostolopoulos, V.
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Tropper, A.C.
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22 September 2010
Barnes, M.E.
02cc9817-23c5-4ddb-855b-1ca14818e67d
Mihoubi, Z.
cd6da620-8894-41a0-b5b3-9a45d5061349
Wilcox, K.G.
b7c8da76-3530-4cbf-aaec-ffa11c347230
Quarterman, A.H.
337f5bd1-5420-45fb-a7e1-f3955c1bfe62
Farrer, I.
8e39904e-2255-4432-be5b-1b46c5b0dd9a
Ritchie, D.A.
83562b7e-0986-4822-9cfe-8c4ac95596c7
Garnache, A.
401e722a-e0e9-4e7b-8150-a6b41371ebe4
Hoogland, S.
4cb41793-ad90-41f3-9944-bc8774fac5cb
Apostolopoulos, V.
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Tropper, A.C.
f3505426-e0d5-4e91-aed3-aecdb44b393c
Barnes, M.E., Mihoubi, Z., Wilcox, K.G., Quarterman, A.H., Farrer, I., Ritchie, D.A., Garnache, A., Hoogland, S., Apostolopoulos, V. and Tropper, A.C.
(2010)
Gain bandwidth characterization of surface-emitting quantum well laser gain structures for femtosecond operation.
Optics Express, 18 (20), .
(doi:10.1364/OE.18.021330).
(PMID:20941029)
Abstract
We present a method to experimentally characterize the gain filter and calculate a corresponding parabolic gain bandwidth of lasers that are described by “class A” dynamics by solving the master equation of spectral condensation for Gaussian spectra. We experimentally determine the gain filter, with an equivalent parabolic gain bandwidth of up to 51 nm, for broad-band InGaAs/GaAs quantum well gain surface-emitting semiconductor laser structures capable of producing pulses down to 60 fs width when mode-locked with an optical Stark saturable absorber mirror.
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Published date: 22 September 2010
Organisations:
High Energy Physics
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Local EPrints ID: 179449
URI: http://eprints.soton.ac.uk/id/eprint/179449
ISSN: 1094-4087
PURE UUID: 1fc83249-b4f9-45b1-a3ab-3fb440b36f8d
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Date deposited: 01 Apr 2011 12:23
Last modified: 14 Mar 2024 02:53
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Contributors
Author:
M.E. Barnes
Author:
Z. Mihoubi
Author:
K.G. Wilcox
Author:
A.H. Quarterman
Author:
I. Farrer
Author:
D.A. Ritchie
Author:
A. Garnache
Author:
S. Hoogland
Author:
A.C. Tropper
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