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Stress engineering and optimization of thick garnet crystal films grown by pulsed laser deposition

Stress engineering and optimization of thick garnet crystal films grown by pulsed laser deposition
Stress engineering and optimization of thick garnet crystal films grown by pulsed laser deposition
We present here results indicating that stress in films grown by pulsed laser deposition (PLD) may be engineered simply by altering the growth parameters of substrate temperature and laser fluence to balance tensile and compressive stresses. Compositional and structural analysis of Gd3Ga5O12 (GGG) films grown on Y3Al5O12 (YAG) substrates, using three different PLD setups and two different ablating lasers, reveal the effects of different growth parameters on residual stress. Some stress reduction strategies were investigated, including slower heating and cooling ramp rates, and amorphous buffer layers, but changing the growth parameters of substrate temperature and laser fluence was found to have a more significant effect. To characterize the evolution of film stress as thickness increases for different laser fluences, three films were grown in stages to allow substrate curvature measurements and X-ray diffraction analysis to be performed every time the thickness had doubled (from 1-16 µm in thickness). The results from these experiments reveal a compressive stress that relaxes with thickness, thought to be due to lattice mismatch, and leads to the conclusion that stress in PLD grown films of GGG on YAG is a balance between lattice mismatch, thermal expansion mismatch and ion-bombardment.
1528-7483
1098-1108
May-Smith, T.C.
47952bbd-ce28-4507-a723-b4d80bf0f809
Sloyan, K.A.
5b66c8be-437e-467f-aeb0-5a742eea5abf
Gazia, Rossana
c9653fc9-4833-48f5-a6db-435c94f9c2f3
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
May-Smith, T.C.
47952bbd-ce28-4507-a723-b4d80bf0f809
Sloyan, K.A.
5b66c8be-437e-467f-aeb0-5a742eea5abf
Gazia, Rossana
c9653fc9-4833-48f5-a6db-435c94f9c2f3
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020

May-Smith, T.C., Sloyan, K.A., Gazia, Rossana and Eason, R.W. (2011) Stress engineering and optimization of thick garnet crystal films grown by pulsed laser deposition. Crystal Growth & Design, 11 (4), 1098-1108. (doi:10.1021/cg101285r). (PMID:19997989)

Record type: Article

Abstract

We present here results indicating that stress in films grown by pulsed laser deposition (PLD) may be engineered simply by altering the growth parameters of substrate temperature and laser fluence to balance tensile and compressive stresses. Compositional and structural analysis of Gd3Ga5O12 (GGG) films grown on Y3Al5O12 (YAG) substrates, using three different PLD setups and two different ablating lasers, reveal the effects of different growth parameters on residual stress. Some stress reduction strategies were investigated, including slower heating and cooling ramp rates, and amorphous buffer layers, but changing the growth parameters of substrate temperature and laser fluence was found to have a more significant effect. To characterize the evolution of film stress as thickness increases for different laser fluences, three films were grown in stages to allow substrate curvature measurements and X-ray diffraction analysis to be performed every time the thickness had doubled (from 1-16 µm in thickness). The results from these experiments reveal a compressive stress that relaxes with thickness, thought to be due to lattice mismatch, and leads to the conclusion that stress in PLD grown films of GGG on YAG is a balance between lattice mismatch, thermal expansion mismatch and ion-bombardment.

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More information

Published date: 9 March 2011
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 180871
URI: http://eprints.soton.ac.uk/id/eprint/180871
ISSN: 1528-7483
PURE UUID: 067ab618-b031-4847-8ed1-0cf74aa819db
ORCID for R.W. Eason: ORCID iD orcid.org/0000-0001-9704-2204

Catalogue record

Date deposited: 12 Apr 2011 14:27
Last modified: 18 Feb 2021 16:36

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