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Sol–gel processing of silicon nitride films from Si(NHMe)4 and ammonia

Sol–gel processing of silicon nitride films from Si(NHMe)4 and ammonia
Sol–gel processing of silicon nitride films from Si(NHMe)4 and ammonia
The formation of silicon nitride films using a sol–gel process and dip-coating is reported. The effect of a trifluoromethanesulfonic acid catalyst on condensation is investigated, and affects the behaviour of gels on heating. Smooth films can be obtained on silicon wafer substrates, and these can be built up using multiple dippings as the gelation process is irreversible. Firing at 1000 °C produces amorphous silicon nitride films, though these contain some carbon and hydrogen and are sensitive to surface oxidation.
6370-6374
Hassan, Shereen
c033f522-9ce1-4c42-9f74-22571c8d5674
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Kalaji, Ali
902c05ca-71d9-48ff-b037-f294567e2273
Hassan, Shereen
c033f522-9ce1-4c42-9f74-22571c8d5674
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Kalaji, Ali
902c05ca-71d9-48ff-b037-f294567e2273

Hassan, Shereen, Hector, Andrew L. and Kalaji, Ali (2011) Sol–gel processing of silicon nitride films from Si(NHMe)4 and ammonia. Journal of Materials Chemistry, 21 (17), 6370-6374. (doi:10.1039/C1JM10127G).

Record type: Article

Abstract

The formation of silicon nitride films using a sol–gel process and dip-coating is reported. The effect of a trifluoromethanesulfonic acid catalyst on condensation is investigated, and affects the behaviour of gels on heating. Smooth films can be obtained on silicon wafer substrates, and these can be built up using multiple dippings as the gelation process is irreversible. Firing at 1000 °C produces amorphous silicon nitride films, though these contain some carbon and hydrogen and are sensitive to surface oxidation.

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Published date: 2011
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Identifiers

Local EPrints ID: 181823
URI: http://eprints.soton.ac.uk/id/eprint/181823
DOI: doi:10.1039/C1JM10127G
PURE UUID: f0d138bb-4f80-4d53-b095-dd35cbce7d29
ORCID for Andrew L. Hector: ORCID iD orcid.org/0000-0002-9964-2163

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Date deposited: 19 Apr 2011 14:34
Last modified: 15 Mar 2024 02:52

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Author: Shereen Hassan
Author: Andrew L. Hector ORCID iD
Author: Ali Kalaji

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