Bosi, Matteo, Attolini, Giovanni, Watts, Bernard E., Rossi, Francesca, Ferrari, Claudio, Riesz, Ferenc and Jiang, Liudi
Wafer curvature analysis in 3C-SiC layers grown
on (0 0 1) and (1 1 1) Si substrates
[in special issue: The 16th International Conference on Crystal Growth (ICCG16)/The 14th International Conference on Vapor Growth and Epitaxy (ICVGE14) ]
Journal of Crystal Growth, 318, (1), . (doi:10.1016/j.jcrysgro.2010.10.042).
Full text not available from this repository.
To assess deformation issues in the vapor phase epitaxy of 3C-SiC on (0 0 1) and (1 1 1) Si substrates, we
investigated different pre-growth (carburisation) procedures, adding various amount of SiH4 to C3H8. The
mechanical deformation of the samples was measured by quantitative Makyoh topography, through
which 3D deformation maps of the entire wafers were obtained. X-ray diffraction was used to check the
crystal quality of the layers and, in transmission geometry, to assess whether the observed deformation
was plastic or elastic. Residual stress of the deposited 3C-SiC layers was investigated across the entire
wafer substrates by using Raman spectroscopy and values between 0.5 and 1 GPa were found. It was
observed that, for a given carburisation procedure, the crystalline orientation of the Si substrates plays an
important role in the substrate curvature (convex and concave). The addition of SiH4 during carburisation
ramp leads to increased deformation for SiC/Si (0 0 1), while decreased deformation for SiC/Si (1 1 1).
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