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Structural and surface characterization of cold deposited zinc sulfide thin films

Structural and surface characterization of cold deposited zinc sulfide thin films
Structural and surface characterization of cold deposited zinc sulfide thin films
Zinc sulfide thin films with the thickness of about 0.5 µm were deposited using a thermal evaporation system onto oxidized silicon substrates at cold temperature (Tcold = -50°C) and at ambient temperature (Tambient = 25°C). A special substrate holder with a thermoelectric cooler was used to cool the substrates. The crystalline structure and the morphology of the films were investigated by X-Ray Diffraction and atomic force microscopy, respectively. XRD results show that the structure of the cold deposited ZnS thin film was completely amorphous. The ambient deposited ZnS thin film has a mixture of amorphous structure and polycrystalline structure with the preference orientation of (111) plane. The crystallite size of ambient deposited ZnS thin film was about 10 nm as calculated using the Scherrer formula. The AFM analysis revealed that the estimated grain size of cold deposited and ambient deposited ZnS were about 360 nm and 1220 nm, respectively. The surface roughness of the cold deposited ZnS thin film was greater than the surface roughness of the ambient deposited ZnS thin film.
Salleh, Saafie
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Dalimin, M.N.
bf509261-2a08-44b7-b828-4dbdf846b60a
Rutt, H.N.
e09fa327-0c01-467a-9898-4e7f0cd715fc
Salleh, Saafie
942556db-1834-44c7-a474-06440e46da88
Dalimin, M.N.
bf509261-2a08-44b7-b828-4dbdf846b60a
Rutt, H.N.
e09fa327-0c01-467a-9898-4e7f0cd715fc

Salleh, Saafie, Dalimin, M.N. and Rutt, H.N. (2010) Structural and surface characterization of cold deposited zinc sulfide thin films. 3rd International Conference on Solid State Science & Technology (ICSSST 2010), Kuching, Sarawak, Malaysia. 01 - 03 Dec 2010.

Record type: Conference or Workshop Item (Paper)

Abstract

Zinc sulfide thin films with the thickness of about 0.5 µm were deposited using a thermal evaporation system onto oxidized silicon substrates at cold temperature (Tcold = -50°C) and at ambient temperature (Tambient = 25°C). A special substrate holder with a thermoelectric cooler was used to cool the substrates. The crystalline structure and the morphology of the films were investigated by X-Ray Diffraction and atomic force microscopy, respectively. XRD results show that the structure of the cold deposited ZnS thin film was completely amorphous. The ambient deposited ZnS thin film has a mixture of amorphous structure and polycrystalline structure with the preference orientation of (111) plane. The crystallite size of ambient deposited ZnS thin film was about 10 nm as calculated using the Scherrer formula. The AFM analysis revealed that the estimated grain size of cold deposited and ambient deposited ZnS were about 360 nm and 1220 nm, respectively. The surface roughness of the cold deposited ZnS thin film was greater than the surface roughness of the ambient deposited ZnS thin film.

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e-pub ahead of print date: 2010
Venue - Dates: 3rd International Conference on Solid State Science & Technology (ICSSST 2010), Kuching, Sarawak, Malaysia, 2010-12-01 - 2010-12-03
Organisations: Optoelectronics Research Centre

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Local EPrints ID: 193377
URI: http://eprints.soton.ac.uk/id/eprint/193377
PURE UUID: 56fffc49-15cd-4e70-9980-5377f8129504

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Date deposited: 12 Aug 2011 08:06
Last modified: 21 Sep 2020 17:10

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