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Ellipsometric and microwave reflectivity studies of current oscillations during anodic dissolution of p-Si in fluoride solutions

Ellipsometric and microwave reflectivity studies of current oscillations during anodic dissolution of p-Si in fluoride solutions
Ellipsometric and microwave reflectivity studies of current oscillations during anodic dissolution of p-Si in fluoride solutions
Periodic current oscillations during anodic dissolution of monocrystalline p-Si(100) in buffered ammonium fluoride solutions (0.1 mol dm(-3) fluoride, pH 4.5) were investigated using a flow cell in order to eliminate mass transport limitations. The flow cell was designed to permit simultaneous in-situ ellipsometry, impedance and potential modulated microwave reflectivity measurements. Analysis of the ellipsometric response showed that the current oscillations are accompanied by a synchronous variation of the overall oxide thickness with an amplitude of 4.5 +/- 0.1 nn. Analysis of the relationship between the total oxide thickness and the current during the oscillation cycle shows that to a first approximation the rate of chemical dissolution of anodic oxide remains constant. Oscillations of the electrode admittance and potential modulated microwave reflectivity were also measured. The imaginary component of the admittance is related to the oscillation in thickness of a narrow inner region of 'dry' oxide and to changes in the accumulation capacitance. The oscillation in the potential modulated microwave reflectivity is interpreted in terms of the changes in the density of holes accumulated at the p-Si \ SiO2 interface.
silicon, fluoride, etching, ellipsometry, microwave, oscillations, silicon electrode, ammonium fluoride, ring-disk, n-si, interface, oxide, impedance, si(111), growth, model
1572-6657
178-184
Böhm, S.
277d1e3f-e494-4509-b6fa-71e561a50422
Peter, L.M.
a699c8d3-512e-43c4-ad64-7cb5d0694a87
Schlichthörl, G.
ecd650c1-30c2-4ddc-b241-c2521547856e
Greef, R.
91063544-ed89-4738-b5f4-28a984bf5866
Böhm, S.
277d1e3f-e494-4509-b6fa-71e561a50422
Peter, L.M.
a699c8d3-512e-43c4-ad64-7cb5d0694a87
Schlichthörl, G.
ecd650c1-30c2-4ddc-b241-c2521547856e
Greef, R.
91063544-ed89-4738-b5f4-28a984bf5866

Böhm, S., Peter, L.M., Schlichthörl, G. and Greef, R. (2001) Ellipsometric and microwave reflectivity studies of current oscillations during anodic dissolution of p-Si in fluoride solutions. Journal of Electroanalytical Chemistry, 500 (1-2), 178-184. (doi:10.1016/S0022-0728(00)00397-1).

Record type: Article

Abstract

Periodic current oscillations during anodic dissolution of monocrystalline p-Si(100) in buffered ammonium fluoride solutions (0.1 mol dm(-3) fluoride, pH 4.5) were investigated using a flow cell in order to eliminate mass transport limitations. The flow cell was designed to permit simultaneous in-situ ellipsometry, impedance and potential modulated microwave reflectivity measurements. Analysis of the ellipsometric response showed that the current oscillations are accompanied by a synchronous variation of the overall oxide thickness with an amplitude of 4.5 +/- 0.1 nn. Analysis of the relationship between the total oxide thickness and the current during the oscillation cycle shows that to a first approximation the rate of chemical dissolution of anodic oxide remains constant. Oscillations of the electrode admittance and potential modulated microwave reflectivity were also measured. The imaginary component of the admittance is related to the oscillation in thickness of a narrow inner region of 'dry' oxide and to changes in the accumulation capacitance. The oscillation in the potential modulated microwave reflectivity is interpreted in terms of the changes in the density of holes accumulated at the p-Si \ SiO2 interface.

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More information

Published date: 16 March 2001
Keywords: silicon, fluoride, etching, ellipsometry, microwave, oscillations, silicon electrode, ammonium fluoride, ring-disk, n-si, interface, oxide, impedance, si(111), growth, model

Identifiers

Local EPrints ID: 19415
URI: https://eprints.soton.ac.uk/id/eprint/19415
ISSN: 1572-6657
PURE UUID: 3d132a92-8749-442f-879e-b41b0766386d

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Date deposited: 14 Feb 2006
Last modified: 17 Jul 2017 16:31

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