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Significance of stacking fault energy on microstructural evolution in Cu and Cu-Al alloys processed by high-pressure torsion

Significance of stacking fault energy on microstructural evolution in Cu and Cu-Al alloys processed by high-pressure torsion
Significance of stacking fault energy on microstructural evolution in Cu and Cu-Al alloys processed by high-pressure torsion
Disks of pure Cu and several Cu–Al alloys were processed by high-pressure torsion (HPT) at room temperature through different numbers of turns to systematically investigate the influence of the stacking fault energy (SFE) on the evolution of microstructural homogeneity. The results show there is initially an inhomogeneous microhardness distribution but this inhomogneity decreases with increasing numbers of turns and the saturation
microhardness increases with increasing Al concentration. Uniform microstructures are more readily achieved in materials with high or low SFE than in materials with medium SFE, because there are different mechanisms governing the microstructural evolution. Specifically, recovery processes are dominant in high or medium SFE materials, whereas twin fragmentation is dominant in materials having low SFE. The limiting minimum grain size (dmin) of metals processed by HPT decreases with
decreasing SFE and there is additional evidence suggesting that the dependence of dmin on the SFE decreases when the severity of the external loading conditions is increased.
1478-6435
3307-3326
An, X.H.
18016416-a17d-4882-aaa6-5a3c1160e9a9
Lin, Y.
7086cb21-5f6b-48cc-add3-2efb33746dbf
Wu, S.D.
6df11381-5cbc-4b9b-ab65-b18b15272221
Zhang, Z.F.
32ae683a-dc37-4bb4-89b3-ecf266a4c4c9
Figueiredo, R.B.
1b4f5fa6-b201-4435-8f5e-13833fc8d504
Gao, N.
9c1370f7-f4a9-4109-8a3a-4089b3baec21
Langdon, T.G.
86e69b4f-e16d-4830-bf8a-5a9c11f0de86
An, X.H.
18016416-a17d-4882-aaa6-5a3c1160e9a9
Lin, Y.
7086cb21-5f6b-48cc-add3-2efb33746dbf
Wu, S.D.
6df11381-5cbc-4b9b-ab65-b18b15272221
Zhang, Z.F.
32ae683a-dc37-4bb4-89b3-ecf266a4c4c9
Figueiredo, R.B.
1b4f5fa6-b201-4435-8f5e-13833fc8d504
Gao, N.
9c1370f7-f4a9-4109-8a3a-4089b3baec21
Langdon, T.G.
86e69b4f-e16d-4830-bf8a-5a9c11f0de86

An, X.H., Lin, Y., Wu, S.D., Zhang, Z.F., Figueiredo, R.B., Gao, N. and Langdon, T.G. (2011) Significance of stacking fault energy on microstructural evolution in Cu and Cu-Al alloys processed by high-pressure torsion. Philosophical Magazine, 91 (25), 3307-3326. (doi:10.1080/14786435.2011.577757).

Record type: Article

Abstract

Disks of pure Cu and several Cu–Al alloys were processed by high-pressure torsion (HPT) at room temperature through different numbers of turns to systematically investigate the influence of the stacking fault energy (SFE) on the evolution of microstructural homogeneity. The results show there is initially an inhomogeneous microhardness distribution but this inhomogneity decreases with increasing numbers of turns and the saturation
microhardness increases with increasing Al concentration. Uniform microstructures are more readily achieved in materials with high or low SFE than in materials with medium SFE, because there are different mechanisms governing the microstructural evolution. Specifically, recovery processes are dominant in high or medium SFE materials, whereas twin fragmentation is dominant in materials having low SFE. The limiting minimum grain size (dmin) of metals processed by HPT decreases with
decreasing SFE and there is additional evidence suggesting that the dependence of dmin on the SFE decreases when the severity of the external loading conditions is increased.

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More information

Published date: 18 May 2011
Organisations: Engineering Mats & Surface Engineerg Gp

Identifiers

Local EPrints ID: 196019
URI: http://eprints.soton.ac.uk/id/eprint/196019
ISSN: 1478-6435
PURE UUID: 4dd9b280-1c69-4a69-84ee-e5c274a91e80
ORCID for N. Gao: ORCID iD orcid.org/0000-0002-7430-0319
ORCID for T.G. Langdon: ORCID iD orcid.org/0000-0003-3541-9250

Catalogue record

Date deposited: 01 Sep 2011 10:00
Last modified: 15 Mar 2024 03:13

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Contributors

Author: X.H. An
Author: Y. Lin
Author: S.D. Wu
Author: Z.F. Zhang
Author: R.B. Figueiredo
Author: N. Gao ORCID iD
Author: T.G. Langdon ORCID iD

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