Modelling of magnetron sputtering of tungsten oxide with reactive gas pulsing
Modelling of magnetron sputtering of tungsten oxide with reactive gas pulsing
Reactive sputtering is one of the most commonly employed processes for the deposition of thin films. However, the range of applications is limited by inherent instabilities, which necessitates the use of a complex feedback control of reactive gas (RG) partial pressure. Recently pulsing of the RG has been suggested as a possible alternative. In this report, the concept of periodically switching the RG flow between two different values is applied to the deposition of tungsten oxide. The trends in the measured time dependent RG pressure and discharge voltage are reproduced by a dynamical model developed for this process. Furthermore, the model predicts the compositional depth profile of the deposited film reasonably well, and in particular helps to understand the formation of the interfaces in the resulting multi-layer film.
dynamic modelling, gas pulsing, reactive sputtering, tungsten oxide
S522-S526
Kubart, Tomáš
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Polcar, Tomáš
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Kappertz, Oliver
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Parreira, Nuno
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Nyberg, Tomas
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Berg, Sören
91bc89c6-6747-4429-b0cb-d7eb664a65d4
Cavaleiro, Albano
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April 2007
Kubart, Tomáš
1e725364-8435-4ee0-bbc3-cf58e5ac82a8
Polcar, Tomáš
c669b663-3ba9-4e7b-9f97-8ef5655ac6d2
Kappertz, Oliver
a35451ff-de76-4505-8711-139956ddf0a6
Parreira, Nuno
b4c7a6da-9595-4cf0-9d48-b4bdd8558050
Nyberg, Tomas
37a555b0-4f46-4e40-a96a-a118fd0dc13a
Berg, Sören
91bc89c6-6747-4429-b0cb-d7eb664a65d4
Cavaleiro, Albano
83fb0417-34af-4c14-b4b4-b9541e4fc652
Kubart, Tomáš, Polcar, Tomáš, Kappertz, Oliver, Parreira, Nuno, Nyberg, Tomas, Berg, Sören and Cavaleiro, Albano
(2007)
Modelling of magnetron sputtering of tungsten oxide with reactive gas pulsing.
[in special issue: Tenth International Conference on Plasma Surface Engineering (PSE2006)]
Plasma Processes and Polymers, 4, supplement 1, .
(doi:10.1002/ppap.200731301).
Abstract
Reactive sputtering is one of the most commonly employed processes for the deposition of thin films. However, the range of applications is limited by inherent instabilities, which necessitates the use of a complex feedback control of reactive gas (RG) partial pressure. Recently pulsing of the RG has been suggested as a possible alternative. In this report, the concept of periodically switching the RG flow between two different values is applied to the deposition of tungsten oxide. The trends in the measured time dependent RG pressure and discharge voltage are reproduced by a dynamical model developed for this process. Furthermore, the model predicts the compositional depth profile of the deposited film reasonably well, and in particular helps to understand the formation of the interfaces in the resulting multi-layer film.
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Published date: April 2007
Keywords:
dynamic modelling, gas pulsing, reactive sputtering, tungsten oxide
Organisations:
nCATS Group
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Local EPrints ID: 199775
URI: http://eprints.soton.ac.uk/id/eprint/199775
ISSN: 1612-8850
PURE UUID: 1568a06b-9fad-4a06-86df-d91be0efe41f
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Date deposited: 20 Oct 2011 11:27
Last modified: 15 Mar 2024 03:40
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Author:
Tomáš Kubart
Author:
Oliver Kappertz
Author:
Nuno Parreira
Author:
Tomas Nyberg
Author:
Sören Berg
Author:
Albano Cavaleiro
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