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High index contrast Er:Ta2O5 waveguide amplifier on oxidised silicon

Record type: Article

We report a high index contrast erbium doped tantalum pentoxide waveguide amplifier. 2.3 cm long waveguides with erbium concentration of 2.7 × 1020 cm^-3 were fabricated by magnetron sputtering of Er-doped tantalum pentoxide on oxidised silicon substrates and Ar-ion milling with photolithographically defined mask. A net on-chip optical gain of ~2.25 dB/cm at 1531.5 nm was achieved with 20mW of pump power at 977 nm launched into the waveguide. The pump threshold for transparency was 4.5mW.

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Citation

Subramanian, Ananth Z., Murugan, G.Senthil, Zervas, Michalis N. and Wilkinson, James S. (2012) High index contrast Er:Ta2O5 waveguide amplifier on oxidised silicon Optics Communications, 285, (2), pp. 124-127. (doi:10.1016/j.optcom.2011.09.028).

More information

e-pub ahead of print date: 28 September 2011
Published date: 15 January 2012
Keywords: erbium doped waveguide amplifier, tantalum pentoxide, optical amplifier, high index contrast, integrated optics, Erbium
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 205577
URI: http://eprints.soton.ac.uk/id/eprint/205577
ISSN: 0030-4018
PURE UUID: 7f8ecb62-ac4d-472f-afe8-493085bc02cf
ORCID for G.Senthil Murugan: ORCID iD orcid.org/0000-0002-2733-3273
ORCID for James S. Wilkinson: ORCID iD orcid.org/0000-0003-4712-1697

Catalogue record

Date deposited: 12 Dec 2011 15:16
Last modified: 18 Jul 2017 11:04

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Contributors

Author: Ananth Z. Subramanian
Author: G.Senthil Murugan ORCID iD
Author: Michalis N. Zervas

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