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Chemical vapor deposition of GaP and GaAs thin films from [nBu2Ga(?-EtBu2)2GanBu2] (E= P or As) and Ga(PtBu2)3

Chemical vapor deposition of GaP and GaAs thin films from [nBu2Ga(?-EtBu2)2GanBu2] (E= P or As) and Ga(PtBu2)3
Chemical vapor deposition of GaP and GaAs thin films from [nBu2Ga(?-EtBu2)2GanBu2] (E= P or As) and Ga(PtBu2)3
Low pressure chemical vapor deposition (LPCVD) using the single-source precursors [nBu2Ga(?-EtBu2)2GanBu2] (E = P or As) in the temperature range 723–823 K (0.05 mmHg), gives shiny yellow or silvery gray films of GaP and GaAs, respectively, on silica. The composition and morphology of the deposited materials have been probed via X-ray diffraction (XRD), scanning electron microscopy/energy-dispersive X-ray (SEM/EDX), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and Raman spectroscopy, revealing crystalline (cubic) GaE with 1:1 Ga/E ratios. The GaP forms nanorods growing perpendicular to the substrate surface and is rougher than the GaAs, which appears to form smaller, densely packed microcrystallites. While the GaAs films produced in this way did not exhibit any significant luminescence, the reflective GaP films obtained by LPCVD were of good electronic quality, revealing photoluminescence comparable to that of a single crystalline GaP reference. LPCVD using Ga(PtBu2)3 gives GaP, although this appears to be an inferior reagent compared to the dimer. Unlike the corresponding [nBu2In(?-EtBu2)2InnBu2] dimers (see Aksomaityte et al., Chem. Mater.2010, 22, 4246) which gave InE films and nanowires from supercritical chemical fluid deposition in sc-CO2/hexane, under the same conditions (773 K, 12 MPa), the gallium dimer precursors mostly failed to give GaE. Instead significant carbon deposition occurred, indicating solvent degradation.
gallium phosphide, gallium arsenide, chemical vapor deposition, luminescence
0897-4756
5217-5222
Cheng, Fei
a0339c70-2a78-4078-8845-62759ac926d3
George, Kathryn
1e9bf4f9-226e-446e-9ef3-dd61c7f7aa11
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Jura, Marek
d145b3fa-eec4-47d8-b47c-61a2b616bc8f
Kroner, Anna
0494fd4b-dbaf-4b9d-b279-0edcdd3da27f
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Nesbitt, John
cdbbf2a8-da2b-473c-aac6-f3d062245685
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Smith, David
d9b2c02d-b7ea-498b-9ea1-208a1681536f
Wilson, James W.
9c8605f6-489d-48f0-b955-0edd097adc8b
Cheng, Fei
a0339c70-2a78-4078-8845-62759ac926d3
George, Kathryn
1e9bf4f9-226e-446e-9ef3-dd61c7f7aa11
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Jura, Marek
d145b3fa-eec4-47d8-b47c-61a2b616bc8f
Kroner, Anna
0494fd4b-dbaf-4b9d-b279-0edcdd3da27f
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Nesbitt, John
cdbbf2a8-da2b-473c-aac6-f3d062245685
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Smith, David
d9b2c02d-b7ea-498b-9ea1-208a1681536f
Wilson, James W.
9c8605f6-489d-48f0-b955-0edd097adc8b

Cheng, Fei, George, Kathryn, Hector, Andrew L., Jura, Marek, Kroner, Anna, Levason, William, Nesbitt, John, Reid, Gillian, Smith, David and Wilson, James W. (2011) Chemical vapor deposition of GaP and GaAs thin films from [nBu2Ga(?-EtBu2)2GanBu2] (E= P or As) and Ga(PtBu2)3. Chemistry of Materials, 23 (23), 5217-5222. (doi:10.1021/cm202158a).

Record type: Article

Abstract

Low pressure chemical vapor deposition (LPCVD) using the single-source precursors [nBu2Ga(?-EtBu2)2GanBu2] (E = P or As) in the temperature range 723–823 K (0.05 mmHg), gives shiny yellow or silvery gray films of GaP and GaAs, respectively, on silica. The composition and morphology of the deposited materials have been probed via X-ray diffraction (XRD), scanning electron microscopy/energy-dispersive X-ray (SEM/EDX), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and Raman spectroscopy, revealing crystalline (cubic) GaE with 1:1 Ga/E ratios. The GaP forms nanorods growing perpendicular to the substrate surface and is rougher than the GaAs, which appears to form smaller, densely packed microcrystallites. While the GaAs films produced in this way did not exhibit any significant luminescence, the reflective GaP films obtained by LPCVD were of good electronic quality, revealing photoluminescence comparable to that of a single crystalline GaP reference. LPCVD using Ga(PtBu2)3 gives GaP, although this appears to be an inferior reagent compared to the dimer. Unlike the corresponding [nBu2In(?-EtBu2)2InnBu2] dimers (see Aksomaityte et al., Chem. Mater.2010, 22, 4246) which gave InE films and nanowires from supercritical chemical fluid deposition in sc-CO2/hexane, under the same conditions (773 K, 12 MPa), the gallium dimer precursors mostly failed to give GaE. Instead significant carbon deposition occurred, indicating solvent degradation.

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More information

Published date: 15 November 2011
Keywords: gallium phosphide, gallium arsenide, chemical vapor deposition, luminescence
Organisations: Chemistry

Identifiers

Local EPrints ID: 206495
URI: http://eprints.soton.ac.uk/id/eprint/206495
ISSN: 0897-4756
PURE UUID: f941dff8-0a13-4746-8c1a-0a3a2503dd8b
ORCID for Andrew L. Hector: ORCID iD orcid.org/0000-0002-9964-2163
ORCID for William Levason: ORCID iD orcid.org/0000-0003-3540-0971
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468

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Date deposited: 21 Dec 2011 16:19
Last modified: 18 Feb 2021 16:34

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