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Enhanced diffusion following point defect injection into B in SiGe and Si

Willoughby, Arthur F.W., Bonar, Janet M., Dan, Aihua and McGregor, Barry M. (2001) Enhanced diffusion following point defect injection into B in SiGe and Si Defect and Diffusion Forum, 194-199, 717 -722.

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Published date: 2001
Keywords: boron, diffusion, diffusion mechanism, enhanced diffusion, point defect injection, silicon, silicon-germanium

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Local EPrints ID: 21487
URI: http://eprints.soton.ac.uk/id/eprint/21487
ISSN: 1012-0386
PURE UUID: e9850e15-b6fb-4dcf-a9a0-fab3294e6959

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Date deposited: 13 Mar 2006
Last modified: 17 Jul 2017 16:26

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Contributors

Author: Arthur F.W. Willoughby
Author: Janet M. Bonar
Author: Aihua Dan
Author: Barry M. McGregor

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