Enhanced diffusion following point defect injection into B in SiGe and Si


Willoughby, Arthur F.W., Bonar, Janet M., Dan, Aihua and McGregor, Barry M. (2001) Enhanced diffusion following point defect injection into B in SiGe and Si Defect and Diffusion Forum, 194-199, 717 -722.

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Item Type: Article
ISSNs: 1012-0386 (print)
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Keywords: boron, diffusion, diffusion mechanism, enhanced diffusion, point defect injection, silicon, silicon-germanium
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ePrint ID: 21487
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Date Event
2001Published
Date Deposited: 13 Mar 2006
Last Modified: 16 Apr 2017 22:55
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/21487

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