Bonar, J.M., Willoughby, A.F.W., Dan Aihua McGregor, B.M. and Cooke, G.A. (2000) RTA Injection of point defects into B-doped Si and SiGe. In Mass and Charge Transport in Inorganic Materials - Fundamentals to Devices 1. vol. 29, Techna. pp. 461-468 .
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Published date: 2000
Venue - Dates:
Mass and Charge Transport in Inorganic Materials, Jesolo, Italy, 2000-05-27 - 2000-06-01
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Local EPrints ID: 21502
URI: http://eprints.soton.ac.uk/id/eprint/21502
ISBN: 88-86538-30-8
PURE UUID: 32e1a8a1-525e-4896-aa33-fef136719778
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Date deposited: 09 Mar 2006
Last modified: 11 Dec 2021 14:32
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Contributors
Author:
J.M. Bonar
Author:
A.F.W. Willoughby
Author:
B.M. Dan Aihua McGregor
Author:
G.A. Cooke
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