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RTA Injection of point defects into B-doped Si and SiGe

RTA Injection of point defects into B-doped Si and SiGe
RTA Injection of point defects into B-doped Si and SiGe
88-86538-30-8
461-468
Techna
Bonar, J.M.
12d01a95-92f9-4aa1-bce0-c857451cbbfe
Willoughby, A.F.W.
5176a13b-d691-4447-85a6-fdc681118819
Dan Aihua McGregor, B.M.
5c692859-2fae-4419-9f49-aa184c5da4ec
Cooke, G.A.
7ef6df7b-49f6-45fe-96a9-ab3b23a80eab
Bonar, J.M.
12d01a95-92f9-4aa1-bce0-c857451cbbfe
Willoughby, A.F.W.
5176a13b-d691-4447-85a6-fdc681118819
Dan Aihua McGregor, B.M.
5c692859-2fae-4419-9f49-aa184c5da4ec
Cooke, G.A.
7ef6df7b-49f6-45fe-96a9-ab3b23a80eab

Bonar, J.M., Willoughby, A.F.W., Dan Aihua McGregor, B.M. and Cooke, G.A. (2000) RTA Injection of point defects into B-doped Si and SiGe. In Mass and Charge Transport in Inorganic Materials - Fundamentals to Devices 1. vol. 29, Techna. pp. 461-468 .

Record type: Conference or Workshop Item (Paper)

Full text not available from this repository.

More information

Published date: 2000
Venue - Dates: Mass and Charge Transport in Inorganic Materials, Italy, 2000-05-28 - 2000-06-02

Identifiers

Local EPrints ID: 21502
URI: https://eprints.soton.ac.uk/id/eprint/21502
ISBN: 88-86538-30-8
PURE UUID: 32e1a8a1-525e-4896-aa33-fef136719778

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Date deposited: 09 Mar 2006
Last modified: 17 Jul 2017 16:26

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Contributors

Author: J.M. Bonar
Author: A.F.W. Willoughby
Author: B.M. Dan Aihua McGregor
Author: G.A. Cooke

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