Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon
Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon
We investigate the nucleation and evolution of boron-interstitial clusters (BIC), driven by high interstitial supersaturations, S(t), during Si implant damage annealing. The BICs are "fabricated" in a narrow band by overlapping the Si implant damage tail with a lightly doped B buried layer. The BIC band is found to be a net sink for interstitials at supersaturations S(t)>104. Our results suggest that silicon self-interstitial defects are the primary source of interstitials driving transient enhanced diffusion, and that BICs act as a secondary "buffer" for the interstitial supersaturation
855-857
Mannino, G.
6e3173a8-0ec0-4844-b247-4bd17bbdbe1c
Cowern, N.E.B.
d5f2073f-03d8-42bc-bf2d-e9024c7b15bf
Roozeboom, F.
4ef62cd9-9186-4ee3-a08e-05f68fa2318c
Van Berkum, J.G.M.
ec619329-3c94-4217-8a68-2e64f6c92f23
2000
Mannino, G.
6e3173a8-0ec0-4844-b247-4bd17bbdbe1c
Cowern, N.E.B.
d5f2073f-03d8-42bc-bf2d-e9024c7b15bf
Roozeboom, F.
4ef62cd9-9186-4ee3-a08e-05f68fa2318c
Van Berkum, J.G.M.
ec619329-3c94-4217-8a68-2e64f6c92f23
Mannino, G., Cowern, N.E.B., Roozeboom, F. and Van Berkum, J.G.M.
(2000)
Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon.
Applied Physics Letters, 76 (7), .
(doi:10.1063/1.125607).
Abstract
We investigate the nucleation and evolution of boron-interstitial clusters (BIC), driven by high interstitial supersaturations, S(t), during Si implant damage annealing. The BICs are "fabricated" in a narrow band by overlapping the Si implant damage tail with a lightly doped B buried layer. The BIC band is found to be a net sink for interstitials at supersaturations S(t)>104. Our results suggest that silicon self-interstitial defects are the primary source of interstitials driving transient enhanced diffusion, and that BICs act as a secondary "buffer" for the interstitial supersaturation
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Published date: 2000
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Local EPrints ID: 21522
URI: http://eprints.soton.ac.uk/id/eprint/21522
ISSN: 0003-6951
PURE UUID: 298ff942-c4d6-4387-8f9c-fb9379f8f05e
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Date deposited: 07 Feb 2007
Last modified: 15 Mar 2024 06:31
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Author:
G. Mannino
Author:
N.E.B. Cowern
Author:
F. Roozeboom
Author:
J.G.M. Van Berkum
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