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The electrical response of thick-film resistors to hydrostatic pressure and uniaxial stress between 77 and 535 K

The electrical response of thick-film resistors to hydrostatic pressure and uniaxial stress between 77 and 535 K
The electrical response of thick-film resistors to hydrostatic pressure and uniaxial stress between 77 and 535 K
The longitudinal gauge factor for a thick-film resistor material (Heraeus 8241) printed on an alumina substrate is found to be 12.6 at 295 K. The piezoresistive coefficient G, the unit change in resistivity per unit change in strain is 19.5, with a negative temperature coefficient of ?0.00335 K?1, measured between 77 and 535 K. Thick-film resistors of different geometry were subject to hydrostatic pressure, and by the use of the piezoresistive equation based on elastic theory, and elastic modulus data for Heraeus 8241, G was calculated and found to be 19.7 at 295 K, thus validating the piezoresistive equations and the elastic modulus value for Heraeus 8241. Hydrostatic pressure tests at elevated temperature were believed to be subject to some error, 10% at 500 K, due to adiabatic heating effects. However, it is apparent that resistance change can be predicted with a knowledge of strain in the x, y and z axes. This will prove useful for thick-film strain sensor design, where the thick-film resistor is simultaneously stressed in more than one direction.
hydrostatic, thick-film, piezoresistor, gauge factor
0924-4247
114-119
Fawcett, Nigel
f76a7824-04a8-47ed-97be-8d11bb51aaf8
Hill, Martyn
0cda65c8-a70f-476f-b126-d2c4460a253e
Fawcett, Nigel
f76a7824-04a8-47ed-97be-8d11bb51aaf8
Hill, Martyn
0cda65c8-a70f-476f-b126-d2c4460a253e

Fawcett, Nigel and Hill, Martyn (1999) The electrical response of thick-film resistors to hydrostatic pressure and uniaxial stress between 77 and 535 K. Sensors and Actuators A: Physical, 78 (2-3), 114-119. (doi:10.1016/S0924-4247(99)00225-3).

Record type: Article

Abstract

The longitudinal gauge factor for a thick-film resistor material (Heraeus 8241) printed on an alumina substrate is found to be 12.6 at 295 K. The piezoresistive coefficient G, the unit change in resistivity per unit change in strain is 19.5, with a negative temperature coefficient of ?0.00335 K?1, measured between 77 and 535 K. Thick-film resistors of different geometry were subject to hydrostatic pressure, and by the use of the piezoresistive equation based on elastic theory, and elastic modulus data for Heraeus 8241, G was calculated and found to be 19.7 at 295 K, thus validating the piezoresistive equations and the elastic modulus value for Heraeus 8241. Hydrostatic pressure tests at elevated temperature were believed to be subject to some error, 10% at 500 K, due to adiabatic heating effects. However, it is apparent that resistance change can be predicted with a knowledge of strain in the x, y and z axes. This will prove useful for thick-film strain sensor design, where the thick-film resistor is simultaneously stressed in more than one direction.

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More information

Published date: 1999
Keywords: hydrostatic, thick-film, piezoresistor, gauge factor

Identifiers

Local EPrints ID: 21676
URI: http://eprints.soton.ac.uk/id/eprint/21676
ISSN: 0924-4247
PURE UUID: 9eb2ee4e-3f23-400c-b59e-6b7f3d597821
ORCID for Martyn Hill: ORCID iD orcid.org/0000-0001-6448-9448

Catalogue record

Date deposited: 27 Feb 2007
Last modified: 07 Oct 2020 03:19

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