The University of Southampton
University of Southampton Institutional Repository

Characterisation of morphology and defects in silicon-germanium virtual substrates

Characterisation of morphology and defects in silicon-germanium virtual substrates
Characterisation of morphology and defects in silicon-germanium virtual substrates
Silicon-germanium heterostructures incorporating virtual substrates are successfully used for both microelectronic and optoelectronic applications. However, their use is limited by their surface morphology (e.g. roughness) and defect (e.g. threading dislocations) density. High quality silicon-germanium heterostructures incorporating virtual substrates have been grown epitaxially using different methods. This study reports the effects of the growth parameters on the morphology and defects in different silicon-germanium heterostructures incorporating virtual substrates grown in the Southampton University Microelectronics center (SUMC) by low pressure chemical vapor deposition (LPCVD). Two types of structures: one with a linear and the other with a step variation of the germanium concentration in the virtual substrate, were grown and characterized. Results obtained were in good agreement with others already reported in the literature for similar structures grown using different epitaxial techniques.
549-556
Dilliway, G.D.M.
29167d23-feae-4ecb-9888-811c6ccbb736
Willoughby, A.F.W.
5176a13b-d691-4447-85a6-fdc681118819
Bonar, J.M.
12d01a95-92f9-4aa1-bce0-c857451cbbfe
Dilliway, G.D.M.
29167d23-feae-4ecb-9888-811c6ccbb736
Willoughby, A.F.W.
5176a13b-d691-4447-85a6-fdc681118819
Bonar, J.M.
12d01a95-92f9-4aa1-bce0-c857451cbbfe

Dilliway, G.D.M., Willoughby, A.F.W. and Bonar, J.M. (2000) Characterisation of morphology and defects in silicon-germanium virtual substrates. Journal of Materials Science: Materials in Electronics, 11 (7), 549-556. (doi:10.1023/A:1026591717548).

Record type: Article

Abstract

Silicon-germanium heterostructures incorporating virtual substrates are successfully used for both microelectronic and optoelectronic applications. However, their use is limited by their surface morphology (e.g. roughness) and defect (e.g. threading dislocations) density. High quality silicon-germanium heterostructures incorporating virtual substrates have been grown epitaxially using different methods. This study reports the effects of the growth parameters on the morphology and defects in different silicon-germanium heterostructures incorporating virtual substrates grown in the Southampton University Microelectronics center (SUMC) by low pressure chemical vapor deposition (LPCVD). Two types of structures: one with a linear and the other with a step variation of the germanium concentration in the virtual substrate, were grown and characterized. Results obtained were in good agreement with others already reported in the literature for similar structures grown using different epitaxial techniques.

This record has no associated files available for download.

More information

Published date: 2000

Identifiers

Local EPrints ID: 21788
URI: http://eprints.soton.ac.uk/id/eprint/21788
PURE UUID: 7ef381ca-ea2b-4c5f-9642-6f43d0927e97

Catalogue record

Date deposited: 06 Feb 2007
Last modified: 15 Mar 2024 06:32

Export record

Altmetrics

Contributors

Author: G.D.M. Dilliway
Author: A.F.W. Willoughby
Author: J.M. Bonar

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×