Antimony and boron diffusion in SiGe and Si under the influence of injected point defects

Bonar, J.M., Willoughby, A.F.W., Dan, A.H., McGregor, B.M., Lerch, W., Loffelmacher, D., Cooke, G.A. and Dowsett, M.G. (2001) Antimony and boron diffusion in SiGe and Si under the influence of injected point defects. Journal of Materials Science: Materials in Electronics, 12 (4-6), 219-221. (doi:10.1023/A:1011299017835).

Abstract

The diffusion of Sb and B in both Si and SiGe is studied in this work. Injection of both interstitial- and vacancy-type point defects using rapid thermal annealing (RTA) in both NH3 and O2 atmospheres is calibrated for Sb diffusion in Si, before examining Sb diffusion in SiGe and B diffusion in Si and SiGe. Measurement of the diffusion retardation or enhancement under defect injection conditions will elucidate the diffusion mechanism and allow determination of the diffusivity, necessary for modeling of device fabrication processes. These experiments confirm the predominant mechanism for diffusion of Sb in Si and SiGe to be vacancy-mediated, while the predominant mechanism for B appears to be interstitial-mediated in Si and SiGe. The diffusivity values measured for B in Si and SiGe are reported.

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